IXFK320N17T2 IXYS, IXFK320N17T2 Datasheet

MOSFET N-CH 170V 320A TO264

IXFK320N17T2

Manufacturer Part Number
IXFK320N17T2
Description
MOSFET N-CH 170V 320A TO264
Manufacturer
IXYS
Series
GigaMOS™r
Type
GigaMOS Trench T2 HiperFetr
Datasheet

Specifications of IXFK320N17T2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.2 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
170V
Current - Continuous Drain (id) @ 25° C
320A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
640nC @ 10V
Input Capacitance (ciss) @ Vds
45000pF @ 25V
Power - Max
1670W
Mounting Type
Through Hole
Package / Case
TO-264
Product
MOSFET Gate Drivers
Rise Time
170 ns
Fall Time
230 ns
Supply Current
100 A
Maximum Power Dissipation
1670 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Maximum Turn-off Delay Time
115 ns
Maximum Turn-on Delay Time
46 ns
Minimum Operating Temperature
- 55 C
Number Of Drivers
Single
Number Of Outputs
1
Output Current
320 A
Output Voltage
170 V
Vdss, Max, (v)
170
Id(cont), Tc=25°c, (a)
320
Rds(on), Max, Tj=25°c, (?)
0.0052
Ciss, Typ, (pf)
45000
Qg, Typ, (nc)
640
Pd, (w)
1670
Rthjc, Max, (k/w)
0.09
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
GigaMOS
HiperFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
I
E
P
dV/dt
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
L(RMS)
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
External Lead Current Limit
T
T
T
T
I
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
TM
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C (Chip Capability)
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
≤ I
TM
= 0V, I
= V
= ± 20V, V
= V
= 10V, I
DM
TrenchT2
GS
, V
DSS
, I
DD
D
, V
D
D
= 3mA
≤ V
= 8mA
= 60A, Note 1
GS
DS
= 0V
DSS
= 0V
(PLUS247)
, T
J
GS
≤ 175°C
= 1MΩ
Advance Technical Information
T
J
= 150°C
JM
IXFK320N17T2
IXFX320N17T2
20..120 /4.5..27
170
Min.
2.5
Characteristic Values
-55 ... +175
-55 ... +175
Maximum Ratings
1.13/10
1670
± 20
± 30
Typ.
170
170
320
160
800
100
175
300
260
20
10
5
6
± 200
Nm/lb.in.
Max.
5.0
5.2 mΩ
50
5
N/lb.
V/ns
mA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
g
J
V
I
R
t
TO-264 (IXFK)
PLUS247 (IXFX)
G = Gate
S = Source
Features
Advantages
Applications
D25
rr
International Standard Packages
High Current Handling Capability
Fast Intrinsic Diode
Avalanche Rated
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
Low R
Easy to Mount
Space Savings
High Power Density
Synchronous Recification
DS(on)
DSS
G
D
DS(on)
S
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
D
TAB = Drain
170V
320A
5.2mΩ Ω Ω Ω Ω
150ns
= Drain
(TAB)
(TAB)
DS100188(09/09)

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IXFK320N17T2 Summary of contents

Page 1

... GSS DSS DS DSS 10V 60A, Note 1 DS(on © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFK320N17T2 IXFX320N17T2 Maximum Ratings 170 = 1MΩ 170 GS ± 20 ± 30 320 160 800 JM 100 5 1670 ≤ 175° -55 ... +175 175 -55 ... +175 300 260 1.13/10 20 ...

Page 2

... I = 0.5 • I 185 DSS D D25 175 0.15 Characteristic Values Min. Typ. JM 0.53 9.00 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFK320N17T2 IXFX320N17T2 TO-264 (IXFK) Outline Max Ω Millimeter Dim. ns Min 2. 1.12 b1 2.39 ...

Page 3

... Value vs. D 180 160 140 T = 175ºC J 120 100 25º 250 300 350 400 IXFK320N17T2 Fig. 2. Extended Output Characteristics @ T = 25º 15V GS 10V Volts DS Fig Normalized to I DS(on) Junction Temperature V = 10V GS -50 ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 400 350 300 250 200 150 25ºC - 40ºC 100 50 5.0 5.5 6 25ºC J 0.8 0.9 1.0 1.1 1.2 1.3 1,000.0 C iss 100.0 10.0 C oss 1.0 C rss 0 IXFK320N17T2 IXFX320N17T2 Fig. 8. Transconductance 100 120 I - Amperes D Fig. 10. Gate Charge V = 85V 160A 10mA 100 ...

Page 5

... T = 125ºC J 500 160 400 140 = 25ºC J 300 120 200 100 100 80 140 160 180 200 IXFK320N17T2 IXFX320N17T2 Fig. 14. Resistive Turn-on Rise Time vs. Drain Current R = 1Ω 10V 85V 125º 25º 100 120 140 I ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 19. Maximum Transient Thermal Impedance Fig. 19. Maximium Transient Thermal Impedance .sadgsfgsf 0.001 0.01 Pulse Width - Seconds IXFK320N17T2 IXFX320N17T2 0.1 1 IXYS REF:F_320N17T2(9V)9-02-09 10 ...

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