RHK005N03T146 Rohm Semiconductor, RHK005N03T146 Datasheet
RHK005N03T146
Manufacturer Part Number
RHK005N03T146
Description
MOSFET N-CH 30V 500MA SOT-346
Manufacturer
Rohm Semiconductor
Datasheet
1.RHK005N03T146.pdf
(3 pages)
Specifications of RHK005N03T146
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
500mA
Vgs(th) (max) @ Id
2.5V @ 1mA
Input Capacitance (ciss) @ Vds
45pF @ 10V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
350mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Transistor Case Style
SOT-346
No. Of Pins
3
Svhc
No SVHC
Configuration
Single
Resistance Drain-source Rds (on)
0.55 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.5 A
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RHK005N03T146TR
Transistors
4V Drive Nch MOS FET
RHK005N03
Silicon N-channel MOS FET
1) Low On-resistance.
2) High speed switching.
Switching
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
∗ Each terminal mounted on a recommended land
Channel to ambient
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Type
RHK005N03
Structure
Features
Applications
Packaging specifications and h
Absolute maximum ratings (Ta=25°C)
Thermal resistance
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Taping
T146
3000
FE
Rth(ch-a)
Symbol
Symbol
V
V
Tstg
Tch
I
P
DSS
GSS
I
DP
D
D
∗1
∗2
∗
−55 to +150
Limits
Limits
±500
±2.0
625
±20
200
150
30
(1)Source
(2)Gate
(3)Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
External dimensions (Unit : mm)
Inner circuit
SMT3
°C/W
Unit
Unit
mW
mA
°C
°C
(2)
V
V
A
∗1
0.95 0.95
( 3 )
( 2 )
Abbreviated symbol : KU
1.9
2.9
0.4
(3)
(1)
( 1 )
0.15
Each lead has same dimensions
(1)
(2)
(3)
1.1
∗2
0.8
RHK005N03
Source
Gate
Drain
1/2
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RHK005N03T146 Summary of contents
Page 1
Transistors 4V Drive Nch MOS FET RHK005N03 Structure Silicon N-channel MOS FET Features 1) Low On-resistance. 2) High speed switching. Applications Switching Packaging specifications and h FE Package Taping Type Code T146 Basic ordering unit (pieces) 3000 RHK005N03 Absolute maximum ...
Page 2
Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS (on) resistance Forward transfer admittance Y ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...