2SK2731T146 Rohm Semiconductor, 2SK2731T146 Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single 2SK2731T146
Manufacturer Part Number
2SK2731T146
Description
MOSFET N-CH 30V 200MA SOT-346
Manufacturer
Rohm Semiconductor
Specifications of 2SK2731T146
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.8 Ohm @ 100mA, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
200mA
Vgs(th) (max) @ Id
2.5V @ 1mA
Input Capacitance (ciss) @ Vds
25pF @ 10V
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.8 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.2 A
Power Dissipation
200 mW
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
2SK2731T146
Available stocks
Interface and switching (30V, 200mA)
Structure
Silicon N-channel
MOSFET
Features
1) Low on-resistance.
2) High-speed switching.
3) Low-voltage drive(4V).
Application
Switching
Packaging specifications
Absolute maximum ratings (Ta=25C)
○
∗
c
www.rohm.com
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Type
2SK2731
Pw ≤ 10μs, Duty cycle ≤ 1%
2SK2731
2010 ROHM Co., Ltd. All rights reserved.
Parameter
Package
Code
Basic ordering unit (pieces)
Continuous
Pulsed
Symbol
V
V
Tstg
Tch
I
P
I
DSS
GSS
DP
D
D
∗
Taping
T146
3000
− 55 to +150
Limits
± 20
200
150
200
800
30
Unit
mW
mA
mA
°C
°C
1/3
V
V
Inner circuit
Dimensions (Unit : mm)
∗
ROHM : SMT3
E I A J : SC-59
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
A protection diode is included between the gate
Gate
∗
(2)
Gate
Protection
Diode
(3)
Abbreviated symbol : KL
(1)
Drain
Source
2010.06 - Rev.A
(1) Source
(2) Gate
(3) Drain
Related parts for 2SK2731T146
2SK2731T146 Summary of contents
Interface and switching (30V, 200mA) 2SK2731 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive(4V). Application Switching Packaging specifications Package Type Code Basic ordering unit (pieces) 2SK2731 Absolute maximum ratings (Ta=25C) Parameter Symbol Drain-source voltage ...
Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state R DS(on) resistance | ∗ Forward transfer admittance ...
V =10V GS Pulsed 2.5 I =200mA D 2 100mA 1.5 1 0.5 0 −50 − 100 125 150 ( °C) CHANNEL TEMPERATURE : Tch Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature 1 ...
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...
Related keywords
2sk2749 2sk2746 2sk2700 2SK2731T146 datasheet 2SK2731T146 data sheet 2SK2731T146 pdf datasheet 2SK2731T146 component 2SK2731T146 part 2SK2731T146 distributor 2SK2731T146 RoHS 2SK2731T146 datasheet download
