RHP020N06T100 Rohm Semiconductor, RHP020N06T100 Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single RHP020N06T100
Manufacturer Part Number
RHP020N06T100
Description
MOSFET N-CH 60V 2A SOT-89
Manufacturer
Rohm Semiconductor
Specifications of RHP020N06T100
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
200 mOhm @ 2A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
140pF @ 10V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2 A
Power Dissipation
2000 mW
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
RHP020N06T100TR
Available stocks
Part Number:
RHP020N06T100
Part Number:
RHP020N06T100
4V Drive Nch MOSFET
Silicon N-channel MOSFET
1) Low On-resistance.
2) High speed switching.
3) Wide SOA.
Switching
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a 40 40 0.7mm ceramic board
∗ When mounted on a 40 40 0.7mm ceramic board
○
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Channel to ambient
Source current
c
www.rohm.com
Type
RHP020N06
Structure
Features
Applications
Packaging specifications and h
Absolute maximum ratings (Ta=25°C)
Thermal resistance
RHP020N06
2009 ROHM Co., Ltd. All rights reserved.
Package
Code
Basic ordering unit (pieces)
Parameter
Parameter
Continuous
Pulsed
Continuous
Pulsed
Taping
T100
1000
FE
Rth(ch-a)
Symbol
Symbol
V
V
Tstg
Tch
I
I
P
DSS
GSS
I
I
DP
SP
D
S
D
∗1
∗1
−55 to +150
Limits
Limits
62.5
500
150
250
±20
60
±2
±8
2
8
2
1/4
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Dimensions (Unit : mm)
Inner circuit
MPT3
(1)Gate
(2)Drain
(3)Source
GATE
°C/W
°C/W
Unit
Unit
mW
°C
°C
W
V
V
A
A
A
A
∗2
∗1
∗
Abbreviated symbol : LR
0.4
(1)
SOURCE
DRAIN
1.5
(2)
4.5
1.6
0.5
3.0
1.5
(3)
0.4
∗2
1.5
0.4
2009.03 - Rev.A
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RHP020N06T100 Summary of contents
Drive Nch MOSFET RHP020N06 Structure Silicon N-channel MOSFET Features 1) Low On-resistance. 2) High speed switching. 3) Wide SOA. Applications Switching Packaging specifications and h FE Package Taping Type Code T100 Basic ordering unit (pieces) 1000 RHP020N06 Absolute maximum ...
RHP020N06 Electrical characteristics (Ta=25°C) Parameter Symbol Min. Gate-source leakage I GSS Drain-source breakdown voltage V (BR) DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state ∗ (on) resistance ∗ Forward ...
RHP020N06 Electrical characteristics curves 10 Ta=25°C Pulsed 10V ...
RHP020N06 0.6 Ta=25°C 0.5 Pulsed 0 2.0A D 0.3 0 GATE-SOURCE VOLTAGE : V [V] GS Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 1000 Ciss 100 Crss ...
Appendix No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the ...
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