STS1HNK60 STMicroelectronics, STS1HNK60 Datasheet

MOSFET N-CH 600V 300MA 8-SOIC

STS1HNK60

Manufacturer Part Number
STS1HNK60
Description
MOSFET N-CH 600V 300MA 8-SOIC
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STS1HNK60

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
300mA
Vgs(th) (max) @ Id
3.7V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 10V
Input Capacitance (ciss) @ Vds
156pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3530-2
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established strip-
based PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is tak-
en to ensure a very good dv/dt capability for the
most demanding applications. Such series comple-
ments ST full range of high voltage MOSFETs in-
cluding revolutionary MDmesh™ products.
APPLICATIONS
ORDERING INFORMATION
August 2003
STS1HNK60
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
GATE CHARGE MINIMIZED
NEW HIGH VOLTAGE BENCHMARK
SWITCH MODE LOW POWER SUPPLIES
(SMPS)
LOW POWER, LOW COST CFL (COMPACT
FLUORESCENT LAMPS)
LOW POWER BATTERY CHARGERS
TYPE
SALES TYPE
STS1HNK60
DS
(on) = 8
600 V
V
DSS
R
< 8.5
DS(on)
MARKING
S1HNK60
0.3 A
I
D
N-CHANNEL 600V - 8 - 0.3A SO-8
2 W
Pw
SuperMESH™Power MOSFET
PACKAGE
SO-8
INTERNAL SCHEMATIC DIAGRAM
SO-8
STS1HNK60
TAPE & REEL
PACKAGING
1/8

Related parts for STS1HNK60

STS1HNK60 Summary of contents

Page 1

... LOW POWER, LOW COST CFL (COMPACT FLUORESCENT LAMPS) LOW POWER BATTERY CHARGERS ORDERING INFORMATION SALES TYPE STS1HNK60 August 2003 N-CHANNEL 600V - 8 - 0.3A SO-8 SuperMESH™Power MOSFET 0 INTERNAL SCHEMATIC DIAGRAM MARKING PACKAGE S1HNK60 SO-8 STS1HNK60 SO-8 PACKAGING TAPE & REEL 1/8 ...

Page 2

... STS1HNK60 ABSOLUTE MAXIMUM RATINGS Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous Drain Current (pulsed Total Dissipation at T TOT Derating Factor dv/dt (1) Peak Diode Recovery voltage slope T Operating Junction Temperature j Storage Temperature T stg ...

Page 3

... Load see, Figure 480V 1 4 10V G GS (Inductive Load see, Figure 5) Test Conditions 0.3 A, di/dt = 100 A/µ 150° (see test circuit, Figure 5) STS1HNK60 Min. Typ. Max. Unit 1 S 156 pF 23.5 pF 3.8 pF Min. Typ. Max. Unit 6 1.1 nC 3.4 nC Min. ...

Page 4

... STS1HNK60 Safe Operating Area Output Characteristics Transconductance 4/8 Thermal Impedance Transfer Characteristics Static Drain-source On Resistance ...

Page 5

... Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp. Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature Normalized BVDSS vs Temperature STS1HNK60 5/8 ...

Page 6

... STS1HNK60 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 Fig. 2: Unclamped Inductive Waveform Fig. 4: Gate Charge test Circuit ...

Page 7

... STS1HNK60 MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0.196 0.244 0.157 0.050 0.023 0016023 7/8 ...

Page 8

... STS1HNK60 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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