AOD409 Alpha & Omega Semiconductor Inc, AOD409 Datasheet

MOSFET P-CH -60V -26A TO-252

AOD409

Manufacturer Part Number
AOD409
Description
MOSFET P-CH -60V -26A TO-252
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AOD409

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
26A
Vgs(th) (max) @ Id
2.4V @ 250µA
Gate Charge (qg) @ Vgs
54nC @ 10V
Input Capacitance (ciss) @ Vds
3600pF @ 30V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1103-2

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Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
Repetitive avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Case
D
General Description
The AOD/I409 uses advanced trench technology to
provide excellent R
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
AOD409/AOI409
P-Channel Enhancement Mode Field Effect Transistor
Top View
G
G
B
A
TO252
DPAK
C
DS(ON)
C
T
T
T
T
T
T
S
C
C
C
C
A
A
D
=25°C
=70°C
=25°C
=100°C
=25°C
=100°C
, low gate charge and low
Bottom View
C
A
A
A
=25°C unless otherwise noted
C
Steady-State
Steady-State
S
t ≤ 10s
Symbol
V
V
I
I
I
E
P
P
T
G
D
DM
AR
J
DS
GS
AR
D
DSM
, T
STG
Top View
D
Symbol
Features
V
I
R
R
R
D
R
DS
DS(ON)
DS(ON)
θJA
θJC
= -26A (V
G
(V) = -60V
< 40mΩ (V
< 55mΩ (V
D
Maximum
-55 to 175
TO-251A
S
GS
33.8
16.7
Typ
IPAK
±20
-60
-26
-18
-60
-26
2.5
1.6
1.9
60
30
40
= -10V)
Bottom View
GS
GS
Rg,Ciss,Coss,Crss Tested
= -10V) @ -20A
= -4.5V)
Max
2.5
25
50
D
S
D
UIS TESTED!
G
G
Units
Units
°C/W
°C/W
°C/W
mJ
°C
W
W
V
V
A
A
D
S

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AOD409 Summary of contents

Page 1

... AOD409/AOI409 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD/I409 uses advanced trench technology to provide excellent R , low gate charge and low DS(ON) gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. ...

Page 2

... AOD409/AOI409 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AOD409/AOI409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -4.5V -10V 25 -6V - (Volts) DS Fig 1: On-Region Characteristics =-4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 125°C 60 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd -3. =- Figure 2: Transfer Characteristics 2 1.8 1.6 ...

Page 4

... AOD409/AOI409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-30V DS I =-20A (nC) g Figure 7: Gate-Charge Characteristics 100.0 R 10.0 DS(ON) 10ms limited DC 1.0 T =175°C, T =25°C J(Max) C 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θJC J, =2.5°C/W θJC 1 0.1 Single Pulse 0 ...

Page 5

... AOD409/AOI409 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS =25° 0.00001 0.0001 Time in avalanche, t Figure 12: Single Pulse Avalanche capability 100 T (°C) CASE Figure 14: Current De-rating (Note θJA θJA J, =50°C/W 1 θJA 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & ...

Page 6

... AOD409/AOI409 G ate C harge Test Circuit & W aveform - Vgs Ig RL Vds DUT Vgs Rg Vgs U nclam ped Inductive Sw itching (U IS) Test C ircuit & W aveform Vds + Vds - L Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. Vgs -10V - Q gs Vds Resistive Switching Test Circuit & W aveform s ...

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