2SK2549(TE12L,F) Toshiba, 2SK2549(TE12L,F) Datasheet

MOSFET N-CH 16V 2A PW-MINI

2SK2549(TE12L,F)

Manufacturer Part Number
2SK2549(TE12L,F)
Description
MOSFET N-CH 16V 2A PW-MINI
Manufacturer
Toshiba
Datasheet

Specifications of 2SK2549(TE12L,F)

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
290 mOhm @ 1A, 4V
Drain To Source Voltage (vdss)
16V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1.1V @ 200µA
Gate Charge (qg) @ Vgs
5nC @ 5V
Input Capacitance (ciss) @ Vds
260pF @ 10V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
PW-MINI
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SK2549(TE12L,F)
2SK2549TE12LFTR
DC−DC Converter, Relay Drive and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
Marking
Lot No.
2.5-V gate drive
Low drain−source ON resistance
High forward transfer admittance
Low leakage current : I
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation
Drain power dissipation
Channel temperature
Storage temperature range
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3:
Thermal resistance, channel to
ambient
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Z
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
7
GS
DC
Pulse (Note 1)
= 20 kΩ)
: V
Part No.
(or abbreviation code)
Note 4
DSS
(Note 1)
(Note 2)
th
= 0.5 to 1.1 V (V
= 100 μA (max) (V
(Ta = 25°C)
R
Symbol
Symbol
th (ch−a)
: R
: |Y
V
V
V
T
I
T
DGR
P
P
GSS
DSS
I
DP
stg
D
ch
D
D
DS (ON)
2SK2549
fs
| = 3.0 S (typ.)
DS
Note 4: A line to the right of a Lot No. identifies the indication of
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
= 10 V, I
DS
= 0.29 Ω (typ.)
−55 to 150
= 16 V)
Rating
Max
product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
150
250
0.5
1.5
16
16
±8
2
6
1
D
= 200 μA)
°C / W
Unit
Unit
°C
°C
W
W
V
V
V
A
Weight: 0.05 g (typ.)
JEDEC
JEITA
TOSHIBA
2-5K1B
2009-09-29
2SK2549
Unit: mm

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2SK2549(TE12L,F) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...

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3 2SK2549 2009-09-29 ...

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4 2SK2549 2009-09-29 ...

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5 2SK2549 2009-09-29 ...

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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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