ZXMN10A08DN8TA Diodes Zetex, ZXMN10A08DN8TA Datasheet

MOSFET N-CH 100V 1.6A 8-SOIC

ZXMN10A08DN8TA

Manufacturer Part Number
ZXMN10A08DN8TA
Description
MOSFET N-CH 100V 1.6A 8-SOIC
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN10A08DN8TA

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
250 mOhm @ 3.2A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.6A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
7.7nC @ 10V
Input Capacitance (ciss) @ Vds
405pF @ 50V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN10A08DN8TATR
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 4 - JANUARY 2005
DEVICE
ZXMN10A08DN8TA
ZXMN10A08DN8TC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
DC - DC converters
Power management functions
Disconnect switches
Motor control
ZXMN
10A08D
= 100V; R
DS(ON)
REEL
SIZE
13”
7”
= 0.25
WIDTH
12mm
12mm
TAPE
I
D
QUANTITY
2,500 units
PER REEL
500 units
= 2.1A
1
ZXMN10A08DN8
S E M I C O N D U C T O R S
PINOUT
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ZXMN10A08DN8TA Summary of contents

Page 1

... Low profile SOIC package APPLICATIONS • converters • Power management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMN10A08DN8TA 7” 12mm ZXMN10A08DN8TC 13” 12mm DEVICE MARKING • ZXMN 10A08D ISSUE 4 - JANUARY 2005 ZXMN10A08DN8 I = 2.1A D QUANTITY ...

Page 2

ZXMN10A08DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Gate source voltage Continuous drain current V =10V =10V =10V (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) (a) ...

Page 3

ISSUE 4 - JANUARY 2005 TYPICAL CHARACTERISTICS 3 ZXMN10A08DN8 ...

Page 4

ZXMN10A08DN8 ELECTRICAL CHARACTERISTICS PARAMETER STATIC Drain-source breakdown voltage Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state resistance (1)(3) Forward transconductance (3) DYNAMIC Input capacitance Output capacitance Reverse transfer capacitance (2) (3) SWITCHING Turn-on delay time ...

Page 5

ISSUE 4 - JANUARY 2005 TYPICAL CHARACTERISTICS 5 ZXMN10A08DN8 ...

Page 6

ZXMN10A08DN8 TYPICAL CHARACTERISTICS ISSUE 4 - JANUARY 2005 6 ...

Page 7

PACKAGE OUTLINE CONTROLLING DIMENSIONS IN MILLIMETERS APPROX CONVERSIONS INCHES PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 H 5.80 6.20 0.228 0.244 E 3.80 ...

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