ZXMN6A09GTA Diodes Zetex, ZXMN6A09GTA Datasheet

MOSFET N-CH 60V 6.9A SOT223

ZXMN6A09GTA

Manufacturer Part Number
ZXMN6A09GTA
Description
MOSFET N-CH 60V 6.9A SOT223
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN6A09GTA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
40 mOhm @ 8.2A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
5.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
24.2nC @ 5V
Input Capacitance (ciss) @ Vds
1407pF @ 40V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN6A09GTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN6A09GTA
Manufacturer:
DIODES
Quantity:
30 000
Part Number:
ZXMN6A09GTA
Manufacturer:
Diodes
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Part Number:
ZXMN6A09GTA
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DIODES
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Part Number:
ZXMN6A09GTA
Manufacturer:
ZETEX
Quantity:
20 000
ZXMN6A09G
60V SOT223 N-channel enhancement mode MOSFET
Summary
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
Applications
Ordering information
Device marking
ZXMN
6A09
Issue 3 - June 2007
© Zetex Semiconductors plc 2007
Device
ZXMN6A09GTA
V
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
DC-DC converters
Power management functions
Disconnect switches
Motor control
(BR)DSS
60
0.060 @ V
0.040 @ V
R
DS(on)
GS
GS
Reel size
(inches)
( )
= 4.5V
= 10V
7
I
D
Tape width
7.5
6.2
(A)
(mm)
1
12
Quantity
per reel
1000
D
Pinout - top view
www.zetex.com
G
S
D
D
G
S

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ZXMN6A09GTA Summary of contents

Page 1

... SOT223 package Applications • DC-DC converters • Power management functions • Disconnect switches • Motor control Ordering information Device Reel size (inches) ZXMN6A09GTA Device marking ZXMN 6A09 Issue 3 - June 2007 © Zetex Semiconductors plc 2007 I (A) D 7.5 6.2 Tape width (mm ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C amb Linear derating factor ...

Page 3

Characteristics Issue 3 - June 2007 © Zetex Semiconductors plc 2007 ZXMN6A09G 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Static Drain-source breakdown voltage V Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) Switching ...

Page 5

Typical characteristics Issue 3 - June 2007 © Zetex Semiconductors plc 2007 ZXMN6A09G 5 www.zetex.com ...

Page 6

Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 3 - June 2007 © Zetex Semiconductors plc 2007 ...

Page 7

Package outline - SOT223 DIM Millimeters Min Max A - 1.80 A1 0.02 0.10 b 0.66 0.84 b2 2.90 3.10 C 0.23 0.33 D 6.30 6.70 Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches Issue 3 ...

Page 8

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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