IRF6712STR1PBF International Rectifier, IRF6712STR1PBF Datasheet

IRF6712STR1PBF

Manufacturer Part Number

IRF6712STR1PBF

Description

MOSFET N-CH 25V 17A DIRECTFET

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF6712STR1PBF.pdf (9 pages)

Specifications of IRF6712STR1PBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

4.9 mOhm @ 17A, 10V

Drain To Source Voltage (vdss)

25V

Current - Continuous Drain (id) @ 25° C

17A

Vgs(th) (max) @ Id

2.4V @ 50µA

Gate Charge (qg) @ Vgs

18nC @ 4.5V

Input Capacitance (ciss) @ Vds

1570pF @ 13V

Power - Max

2.2W

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric SQ

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

8.7 mOhms

Drain-source Breakdown Voltage

25 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

17 A

Power Dissipation

36 W

Gate Charge Qg

13 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF6712STR1PBF
IRF6712STR1PBFTR

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF6712STR1PBF

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Quantity:

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Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Description

The IRF6712SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is

compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection

soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-

age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

The IRF6712SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of

processors operating at higher frequencies. The IRF6712SPbF has been optimized for parameters that are critical in synchronous buck

operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.

‚

www.irf.com

Absolute Maximum Ratings

RoHS Compliant and Halogen Free

Low Profile (<0.7 mm)

Dual Sided Cooling Compatible

Ultra Low Package Inductance

Optimized for High Frequency Switching

Ideal for CPU Core DC-DC Converters

Optimized for both Sync.FET and some Control FET

Low Conduction and Switching Losses

Compatible with existing Surface Mount Techniques

100% Rg tested

application

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

@ T

= 25°C

= 70°C

= 25°C

Fig 1. Typical On-Resistance Vs. Gate Voltage

4 5

V GS, Gate -to -Source Voltage (V)

T J = 25°C

6 7

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Single Pulse Avalanche Energy

Avalanche Current

8 9 10 11 12 13 14 15 16

T J = 125°C

Ãg

Parameter

I D = 17A

@ 10V

„

…

†

25V max ±20V max 3.8mΩ@ 10V 6.7mΩ@ 4.5V

12nC

Repetitive rating; pulse width limited by max. junction temperature.

Starting T

g tot

DSS

measured with thermocouple mounted to top (Drain) of part.

14.0

12.0

10.0

8.0

6.0

4.0

2.0

0.0

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

4.0nC

= 25°C, L = 0.14mH, R

I D = 13A

IRF6712STRPbF

DirectFET™ Power MOSFET ‚

1.7nC

Q G Total Gate Charge (nC)

IRF6712SPbF

gs2

V DS = 20V

V DS = 13V

Max.

130

±20

DS(on)

14nC

= 25Ω, I

DirectFET™ ISOMETRIC

packaging to achieve

10nC

= 13A.

oss

DS(on)

Units

1.9V

04/29/09

gs(th)

Related parts for IRF6712STR1PBF

IRF6712STR1PBF Summary of contents

Page 1

RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for both ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation 70°C Power Dissipation 25°C Power Dissipation Peak Soldering Temperature P T Operating Junction and J Storage Temperature Range ...

Page 4

PULSE WIDTH Tj = 25°C 100 10 1 0.1 2.5V 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 15V ≤60µs PULSE WIDTH 100 150°C ...

Page 5

100 150° 25° -40° 0.0 0.5 1.0 1.5 2 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 70 ...

Page 6

DUT 0 1K 20K S Fig 15a. Gate Charge Test Circuit D.U 20V 0.01 Ω Fig 16a. Unclamped Inductive Test Circuit ≤ 1 ≤ 0.1 % Fig 17a. Switching Time ...

Page 7

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 18. ™ www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + D.U.T. V Waveform DS Re-Applied G ...

Page 8

DirectFET™ Outline Dimension, SQ Outline (Small Size Can, Q-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. DirectFET™ Part Marking Note: For the most current ...

Page 9

DirectFET™ Tape & Reel Dimension (Showing component orientation). Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in ...

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