IPB06N03LA Infineon Technologies, IPB06N03LA Datasheet

MOSFET N-CH 25V 50A D2PAK

IPB06N03LA

Manufacturer Part Number
IPB06N03LA
Description
MOSFET N-CH 25V 50A D2PAK
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPB06N03LA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.9 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2V @ 40µA
Gate Charge (qg) @ Vgs
22nC @ 5V
Input Capacitance (ciss) @ Vds
2653pF @ 15V
Power - Max
83W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
IPB06N03LAINTR
SP000016269

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPB06N03LA
Manufacturer:
Infineon
Quantity:
2 250
Part Number:
IPB06N03LA G
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPB06N03LAG
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 1.3
Features
• Ideal for high-frequency dc/dc converters
• N-channel
• Logic level
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• 175 °C operating temperature
• dv /dt rated
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
IPB06N03LA
IPI06N03LA
IPP06N03LA
®
2 Power-Transistor
3)
j
Package
P-TO263-3-2
P-TO262-3-1
P-TO220-3-1
=25 °C, unless otherwise specified
DS(on)
DS(on)
product (FOM)
P-TO263-3-2
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Ordering Code
Q67042-S4146
Q67042-S4147
Q67042-S4148
stg
T
T
T
I
I
di /dt =200 A/µs,
T
T
D
D
C
C
C
j,max
C
=45 A, R
=50 A, V
page 1
=25 °C
=100 °C
=25 °C
=25 °C
=175 °C
1)
2)
DS
GS
P-TO262-3-1
=20 V,
=25 :
Product Summary
V
R
I
Marking
06N03LA
06N03LA
06N03LA
D
DS
DS(on),max
(SMD version)
IPI06N03LA, IPP06N03LA
-55 ... 175
55/175/56
Value
350
225
±20
50
50
83
P-TO220-3-1
6
IPB06N03LA
25
5.9
50
2003-12-18
Unit
A
mJ
kV/µs
V
W
°C
V
m:
A

Related parts for IPB06N03LA

IPB06N03LA Summary of contents

Page 1

... Ordering Code Marking Q67042-S4146 06N03LA Q67042-S4147 06N03LA Q67042-S4148 06N03LA Symbol Conditions =25 ° =100 ° =25 °C D,pulse = = = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPB06N03LA IPI06N03LA, IPP06N03LA P-TO220-3-1 Value Unit 350 225 mJ 6 kV/µs ± -55 ... 175 °C 55/175/56 2003-12-18 ...

Page 2

... A DS( SMD version SMD version |>2 DS(on)max = =1.8 K/W the chip is able to carry 91 A. thJC <- (one layer, 70 µm thick) copper area for drain page 2 IPB06N03LA IPI06N03LA, IPP06N03LA Values Unit typ. max 1.8 K 1.2 1 0.1 1 µ 100 - 10 100 nA - 7.9 9 7.6 9 ...

Page 3

... Rev. 1.3 Symbol Conditions min. C iss = oss f =1 MHz C rss t d( d(off g( plateau V =0 g(sync = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPB06N03LA IPI06N03LA, IPP06N03LA Values Unit typ. max. - 1995 2653 pF - 848 1128 - 124 186 - 7 3 350 - 0.94 1 2003-12-18 ...

Page 4

... Rev. 1.3 2 Drain current I =f _10 150 200 0 4 Max. transient thermal impedance Z =f(t ) thJC p parameter µs 0 µs 0.2 100 µs 0.1 0.05 0 0.01 0.001 -6 10 100 page 4 IPB06N03LA IPI06N03LA, IPP06N03LA 50 100 150 200 T [°C] C single pulse - [s] p 2003-12-18 ...

Page 5

... Typ. transfer characteristics I =f |>2 DS(on)max parameter 100 175 ° [V] GS Rev. 1.3 6 Typ. drain-source on resistance R =f =25 °C DS(on parameter 3 Typ. forward transconductance g =f =25 ° ° page 5 IPB06N03LA IPI06N03LA, IPP06N03LA 3.5 V 3.8 V 4 100 I [ [A] D 2003-12-18 ...

Page 6

... I D 2.5 2 1.5 1 0.5 0 100 140 180 -60 -20 12 Forward characteristics of reverse diode I =f parameter 1000 100 page 6 IPB06N03LA IPI06N03LA, IPP06N03LA =V DS 400 µA 40 µ 100 140 180 T [° °C 25°C 98% 175°C 98% 175 °C 0.5 1.0 1.5 2.0 V [V] SD 2003-12-18 ...

Page 7

... AV 15 Drain-source breakdown voltage V =f BR(DSS -60 - [°C] j Rev. 1.3 14 Typ. gate charge V =f =25 A pulsed GS gate D parameter ° 100 1000 0 16 Gate charge waveforms s(th (th 100 140 180 page 7 IPB06N03LA IPI06N03LA, IPP06N03LA [nC] gate gate 2003-12-18 ...

Page 8

... Package Outline P-TO263-3-2: Outline Footprint Dimensions in mm Rev. 1.3 IPI06N03LA, IPP06N03LA Packaging page 8 IPB06N03LA 2003-12-18 ...

Page 9

... P-TO262-3-1: Outline P-TO220-3-1: Outline Dimensions in mm Rev. 1.3 IPI06N03LA, IPP06N03LA Packaging page 9 IPB06N03LA 2003-12-18 ...

Page 10

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 IPI06N03LA, IPP06N03LA page 10 IPB06N03LA 2003-12-18 ...

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