IRF530NSTRLPBF International Rectifier, IRF530NSTRLPBF Datasheet

IRF530NSTRLPBF

Manufacturer Part Number

IRF530NSTRLPBF

Description

MOSFET N-CH 100V 17A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF530NSTRLPBF.pdf (11 pages)

Specifications of IRF530NSTRLPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

90 mOhm @ 9A, 10V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

17A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

37nC @ 10V

Input Capacitance (ciss) @ Vds

920pF @ 25V

Power - Max

3.8W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

100 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

17 A

Power Dissipation

3.8 W

Mounting Style

SMD/SMT

Gate Charge Qg

24.7 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF530NSTRLPBF
IRF530NSTRLPBFTR

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Absolute Maximum Ratings

Thermal Resistance

Advanced HEXFET

utilize advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of applications.

The D

die sizes up to HEX-4. It provides the highest power capability and the

lowest possible on-resistance in any existing surface mount package. The

connection resistance and can dissipate up to 2.0W in a typical surface

mount application.

The through-hole version (IRF530NL) is available for low-profile applications.

Description

www.irf.com

dv/dt

STG

θJC

θJA

Pak is suitable for high current applications because of its low internal

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

Pak is a surface mount power package capable of accommodating

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient (PCB Mounted,steady-state)**

Power MOSFETs from International Rectifier

Parameter

‡

ƒ‡

@ 10V

‡

Typ.

300 (1.6mm from case )

–––

HEXFET

IRF530NSPbF

-55 to + 175

Max.

0.47

± 20

3.8

9.0

7.0

7.4

IRF530NSPbF

IRF530NLPbF

Pak

Power MOSFET

DS(on)

Max.

2.15

DSS

IRF530NLPbF

= 17A

= 100V

TO-262

PD - 95100

= 90mΩ

Units

°C/W

W/°C

V/ns

°C

Related parts for IRF530NSTRLPBF

IRF530NSTRLPBF Summary of contents

Page 1

... Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 ...

Page 4

1MHz iss rss oss ds gd 1200 C iss 800 C oss 400 C rss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 SINGLE PULSE 0.02 0.1 (THERMAL RESPONSE) ...

Page 6

D.U 20V V GS 0.01 Ω Charge 6 200 160 DRIVER 120 + ...

Page 7

D.U.T + ‚ - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

Dimensions are shown in millimeters (inches ...

Page 9

TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 ASS EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead-Free" ...

Page 10

D Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR FEED DIRECTION TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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