IRF1010NSTRLPBF International Rectifier, IRF1010NSTRLPBF Datasheet

IRF1010NSTRLPBF

Manufacturer Part Number

IRF1010NSTRLPBF

Description

MOSFET N-CH 55V 85A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF1010NSTRLPBF.pdf (11 pages)

Specifications of IRF1010NSTRLPBF

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

11 mOhm @ 43A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

85A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

120nC @ 10V

Input Capacitance (ciss) @ Vds

3210pF @ 25V

Power - Max

180W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

84 A

Power Dissipation

3.8 W

Mounting Style

SMD/SMT

Gate Charge Qg

80 nC

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

IRF1010NSTRLPBF
IRF1010NSTRLPBFTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

H&T Electronics

Part Number:

IRF1010NSTRLPBF

Quantity:

9 000

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Absolute Maximum Ratings

Advanced HEXFET

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance per

silicon area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET

power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device

for use in a wide variety of applications.

The D

accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible on-

resistance in any existing surface mount package. The

low internal connection resistance and can dissipate up to

2.0W in a typical surface mount application.

The through-hole version (IRF1010NL) is available for low-

profile applications.

www.irf.com

Thermal Resistance

Description

dv/dt

STG

θJC

θJA

Pak is suitable for high current applications because of its

@ T

Advanced Process Technology

Ultra Low On-Resistance

Dynamic dv/dt Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Lead-Free

Pak is a surface mount power package capable of

= 25°C

= 100°C

= 25°C

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 srew

Junction-to-Case

Junction-to-Ambient ( PCB Mounted,steady-state)**

Power MOSFETs from

Parameter

ƒˆ

@ 10V

IRF1010NSPbF

IRF1010NLPbF

300 (1.6mm from case )

Typ.

–––

10 lbf•in (1.1N•m)

HEXFET

-55 to + 175

Max.

D Pak

290

180

± 20

1.2

3.6

‡

Power MOSFET

DS(on)

Max.

0.85

DSS

= 85A‡

TO-262

PD - 95103

= 55V

= 11mΩ

Units

W/°C

°C/W

V/ns

°C

Related parts for IRF1010NSTRLPBF

IRF1010NSTRLPBF Summary of contents

Page 1

... Description ® Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient ∆V /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 100 4.5V 10 20µs PULSE WIDTH 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T = ...

Page 4

0V MHZ C iss = rss = C gd 5000 C oss = Ciss 4000 3000 Coss 2000 Crss ...

Page 5

LIMITED BY PACKAGE 100 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 SINGLE PULSE 0.02 (THERMAL ...

Page 6

D.U 20V V GS 0.01 Ω Charge 6 500 15V 400 DRIVER 300 + ...

Page 7

D.U.T + ‚ - Driver Gate Drive D.U.T. I Reverse Recovery Current D.U.T. V Re-Applied Voltage Inductor Curent www.irf.com + • • ƒ • • • • Period D = P.W. Waveform SD Body Diode Forward Current ...

Page 8

Dimensions are shown in millimeters (inches ...

Page 9

TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 ASS EMBLY LINE "C" Note: "P" embly line pos ition indicates "Lead-Free" ...

Page 10

D Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR FEED DIRECTION TRL FEED DIRECTION NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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