SI4840DY-T1-E3 Vishay, SI4840DY-T1-E3 Datasheet

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... Top View Ordering Information: Si4840DY -T1-E3 (Lead (Pb)-free) Si4840DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Avalanche Energy (Single Pulse) Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

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... Si4840DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

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... Source-to-Drain V SD Source-Drain Diode Forward Voltage Document Number: 71188 S09-0869-Rev. E, 18-May-09 3000 2500 2000 1500 1000 500 0.04 0.03 0. °C J 0.01 0.00 0.8 1.0 1.2 oltage (V) Si4840DY Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 2 1.6 1.2 0.8 0.4 0 ...

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... Si4840DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.6 0.4 0 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

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