BSS138_D87Z Fairchild Semiconductor, BSS138_D87Z Datasheet
BSS138_D87Z
Manufacturer Part Number
BSS138_D87Z
Description
MOSFET N-CH 50V 220MA SOT-23
Manufacturer
Fairchild Semiconductor
Specifications of BSS138_D87Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 Ohm @ 220mA, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
220mA
Vgs(th) (max) @ Id
1.5V @ 1mA
Gate Charge (qg) @ Vgs
2.4nC @ 10V
Input Capacitance (ciss) @ Vds
27pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.5 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
0.5 S
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.22 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
BSS138
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
2005 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
J
L
DSS
GSS
D
, T
JA
Device Marking
STG
N-Channel enhancement mode field effect
SOT-23
SS
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Derate Above 25 C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
Thermal Resistance, Junction-to-Ambient
D
– Continuous
– Pulsed
G
BSS138
Device
Parameter
S
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1)
(Note 1)
(Note 1)
Features
0.22 A, 50 V. R
High density cell design for extremely low R
Rugged and Reliable
Compact industry standard SOT-23 surface mount
package
R
Tape width
G
DS(ON)
DS(ON)
Ratings
55 to +150
8mm
0.22
0.88
0.36
300
350
2.8
= 6.0 @ V
50
= 3.5 @ V
20
D
S
October 2005
GS
GS
= 4.5 V
= 10 V
3000 units
Quantity
BSS138 Rev C(W)
DS(ON)
mW/ C
Units
C/W
W
V
V
A
C
C
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Datasheet:
BSS138_D87Z Summary of contents
Page 1
... Purposes, 1/16” from Case for 10 Seconds Thermal Characteristics Thermal Resistance, Junction-to-Ambient R JA Package Marking and Ordering Information Device Marking Device SS BSS138 2005 Fairchild Semiconductor Corporation Features 0. High density cell design for extremely low R Rugged and Reliable Compact industry standard SOT-23 surface mount package S G ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage. GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) V ...
Page 3
Typical Characteristics 10V 6.0V 4.5V GS 3.5V 0.8 3.0V 0.6 0.4 0 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 220mA D 1 ...
Page 4
Typical Characteristics 220mA 0.2 0.4 0.6 0 GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics LIMIT DS(ON) 0 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...