MOSFET N-CH 50V 220MA SOT-23

BSS138_L99Z

Manufacturer Part NumberBSS138_L99Z
DescriptionMOSFET N-CH 50V 220MA SOT-23
ManufacturerFairchild Semiconductor
BSS138_L99Z datasheet
 


Specifications of BSS138_L99Z

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs3.5 Ohm @ 220mA, 10VDrain To Source Voltage (vdss)50V
Current - Continuous Drain (id) @ 25° C220mAVgs(th) (max) @ Id1.5V @ 1mA
Gate Charge (qg) @ Vgs2.4nC @ 10VInput Capacitance (ciss) @ Vds27pF @ 25V
Power - Max360mWMounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3™, SSD3, SST3Lead Free Status / RoHS StatusLead free / RoHS Compliant
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BSS138
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These
N-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
D
G
SOT-23
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DSS
V
Gate-Source Voltage
GSS
I
Drain Current
– Continuous
D
– Pulsed
Maximum Power Dissipation
P
D
Derate Above 25 C
T
, T
Operating and Storage Junction Temperature Range
J
STG
Maximum Lead Temperature for Soldering
T
L
Purposes, 1/16” from Case for 10 Seconds
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
R
JA
Package Marking and Ordering Information
Device Marking
Device
SS
BSS138
2005 Fairchild Semiconductor Corporation
Features
0.22 A, 50 V. R
R
High density cell design for extremely low R
Rugged and Reliable
Compact industry standard SOT-23 surface mount
package
S
G
o
T
=25
C unless otherwise noted
A
(Note 1)
(Note 1)
(Note 1)
Reel Size
Tape width
7’’
October 2005
= 3.5 @ V
= 10 V
DS(ON)
GS
= 6.0 @ V
= 4.5 V
DS(ON)
GS
DS(ON)
D
S
Ratings
Units
50
V
V
20
0.22
A
0.88
0.36
W
mW/ C
2.8
55 to +150
C
300
C
350
C/W
Quantity
8mm
3000 units
BSS138 Rev C(W)

BSS138_L99Z Summary of contents

  • Page 1

    ... Purposes, 1/16” from Case for 10 Seconds Thermal Characteristics Thermal Resistance, Junction-to-Ambient R JA Package Marking and Ordering Information Device Marking Device SS BSS138 2005 Fairchild Semiconductor Corporation Features 0. High density cell design for extremely low R Rugged and Reliable Compact industry standard SOT-23 surface mount package S G ...

  • Page 2

    Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage. GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) V ...

  • Page 3

    Typical Characteristics 10V 6.0V 4.5V GS 3.5V 0.8 3.0V 0.6 0.4 0 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 220mA D 1 ...

  • Page 4

    Typical Characteristics 220mA 0.2 0.4 0.6 0 GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics LIMIT DS(ON) 0 ...

  • Page 5

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. FAST ® ACEx™ ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ ...