BSS138_L99Z Fairchild Semiconductor, BSS138_L99Z Datasheet - Page 3

• Manufacturer Part Number: BSS138_L99Z
• Description: MOSFET N-CH 50V 220MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of BSS138_L99Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 220mA
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 2.4nC @ 10V
• Input Capacitance (ciss) @ Vds: 27pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
1.8
1.6
1.4
1.2
0.8
0.6
0.8
0.6
0.4
0.2
0.6
0.5
0.4
0.3
0.2
0.1
2
1
Figure 3. On-Resistance Variation with
1
0
0
-50
Figure 1. On-Region Characteristics.
0.5
0
Figure 5. Transfer Characteristics.
I
V
V
D
GS
GS
= 220mA
-25
V
= 10V
= 10V
DS
0.5
1
= 10V
V
V
DS
GS
T
6.0V
0
J
, DRAIN TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
Temperature.
1.5
1
4.5V
25
3.5V
1.5
50
T
2
A
= -55
3.0V
o
75
C
2.5
2
o
125
100
C)
2.5V
o
C
2.5
25
3
o
2.0V
125
C
150
3.5
3
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.01
0.1
4.1
3.5
2.9
2.3
1.7
1.1
0.5
3.4
2.6
2.2
1.8
1.4
0.6
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
1
3
1
0
0
0
V
T
Drain Current and Gate Voltage.
GS
A
= 25
V
= 0V
GS
o
Gate-to-Source Voltage.
= 2.5V
C
0.2
V
SD
0.2
2
V
, BODY DIODE FORWARD VOLTAGE (V)
3.0V
GS
T
A
, GATE TO SOURCE VOLTAGE (V)
= 125
0.4
I
D
, DRAIN CURRENT (A)
o
3.5V
C
0.4
4
T
A
= 125
0.6
4.0V
25
o
C
o
C
0.6
6
4.5V
0.8
-55
I
D
o
C
= 110mA
6.0V
0.8
8
1
BSS138 Rev C(W)
10V
1.2
10
1