BSS123_D87Z Fairchild Semiconductor, BSS123_D87Z Datasheet
BSS123_D87Z
Manufacturer Part Number
BSS123_D87Z
Description
MOSFET N-CH 100V 170MA SOT-23
Manufacturer
Fairchild Semiconductor
Specifications of BSS123_D87Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 Ohm @ 170mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
170mA
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
2.5nC @ 10V
Input Capacitance (ciss) @ Vds
73pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
BSS123
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
2003 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
J
L
DSS
GSS
D
, T
JA
Device Marking
STG
N-Channel enhancement mode field effect
SOT-23
SA
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Derate Above 25 C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
Thermal Resistance, Junction-to-Ambient
D
– Continuous
– Pulsed
G
BSS123
Device
Parameter
S
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1)
(Note 1)
(Note 1)
Features
0.17 A, 100 V. R
High density cell design for extremely low R
Rugged and Reliable
Compact industry standard SOT-23 surface mount
package
Tape width
G
R
DS(ON)
DS(ON)
Ratings
55 to +150
8mm
0.17
0.68
0.36
100
300
350
2.8
20
= 6 @ V
= 10 @ V
D
S
GS
GS
= 10 V
= 4.5 V
June 2003
3000 units
Quantity
BSS123 Rev G(W)
DS(ON)
mW/ C
Units
C/W
W
V
V
A
C
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Datasheet:
BSS123_D87Z Summary of contents
Page 1
... Purposes, 1/16” from Case for 10 Seconds Thermal Characteristics Thermal Resistance, Junction-to-Ambient R JA Package Marking and Ordering Information Device Marking Device SA BSS123 2003 Fairchild Semiconductor Corporation Features 0.17 A, 100 High density cell design for extremely low R Rugged and Reliable Compact industry standard SOT-23 surface mount package S G ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS BV Breakdown Voltage Temperature DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage. GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) V ...
Page 3
Typical Characteristics 10V GS 3.5V 6.0V 0.8 4.5V 3.0V 0.6 0.4 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 2 170mA ...
Page 4
Typical Characteristics 0.17A 0.4 0.8 1 GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics LIMIT DS(ON) 1ms 10ms 100ms 0.1 1s 10s DC ...
Page 5
CROSSVOLT â â â â â Rev. I2 ...