BSS123 Fairchild Semiconductor, BSS123 Datasheet
BSS123
Manufacturer Part Number
BSS123
Description
MOSFET N-CH 100V 170MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.BSS123_D87Z.pdf
(5 pages)
Specifications of BSS123
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 Ohm @ 170mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
170mA
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
2.5nC @ 10V
Input Capacitance (ciss) @ Vds
73pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
0.8 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.17 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Dc
0544
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSS123N
BSS123NTR
BSS123NTR
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BSS123
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
2003 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
J
L
DSS
GSS
D
, T
JA
Device Marking
STG
N-Channel enhancement mode field effect
SOT-23
SA
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Derate Above 25 C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
Thermal Resistance, Junction-to-Ambient
D
– Continuous
– Pulsed
G
BSS123
Device
Parameter
S
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1)
(Note 1)
(Note 1)
Features
0.17 A, 100 V. R
High density cell design for extremely low R
Rugged and Reliable
Compact industry standard SOT-23 surface mount
package
Tape width
G
R
DS(ON)
DS(ON)
Ratings
55 to +150
8mm
0.17
0.68
0.36
100
300
350
2.8
20
= 6 @ V
= 10 @ V
D
S
GS
GS
= 10 V
= 4.5 V
June 2003
3000 units
Quantity
BSS123 Rev G(W)
DS(ON)
mW/ C
Units
C/W
W
V
V
A
C
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BSS123 Summary of contents
Page 1
... Compact industry standard SOT-23 surface mount package =25 C unless otherwise noted A (Note 1) (Note 1) (Note 1) Reel Size Tape width 7’’ June 2003 = DS(ON 4.5 V DS(ON) GS DS(ON Ratings Units 100 0.17 A 0.68 0.36 W mW +150 C 300 350 C/W Quantity 8mm 3000 units BSS123 Rev G(W) ...
Page 2
... GS GEN 100 A/µ determined by the user's board design. CA 2.0% Min Typ Max Units 100 0.8 1 –2.7 mV/ C 1 125 C 2.2 12 0.68 A 0.08 0 3.4 pF 2.2 1 1.8 2.5 nC 0.2 nC 0.3 nC 0.17 A 0.8 1.3 V (Note BSS123 Rev G(W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = 2.5V GS 3.0V 3.5V 4.5V 6.0V 10V 0.2 0.4 0.6 0 DRAIN CURRENT ( 0.08A 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD BSS123 Rev G( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 350°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 350 C/W JA P(pk ( Duty Cycle 100 1000 BSS123 Rev G(W) 100 1000 ...
Page 5
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