FDV301N_NB9V005 Fairchild Semiconductor, FDV301N_NB9V005 Datasheet
FDV301N_NB9V005
Manufacturer Part Number
FDV301N_NB9V005
Description
MOSFET N-CH 25V 220MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDV301N.pdf
(5 pages)
Specifications of FDV301N_NB9V005
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 Ohm @ 400mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
220mA
Vgs(th) (max) @ Id
1.06V @ 250µA
Gate Charge (qg) @ Vgs
0.7nC @ 4.5V
Input Capacitance (ciss) @ Vds
9.5pF @ 10V
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4 Ohm @ 4.5 V
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
0.5 A
Power Dissipation
350 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDV301N_NB9V005
Manufacturer:
Fairchild Semiconductor
Quantity:
102 000
©2009 Fairchild Semiconductor Corporation
Symbol
V
V
I
P
T
ESD
THERMAL CHARACTERISTICS
R
D
Absolute Maximum Ratings
J
DSS
GSS
, I
D
This N-Channel logic level enhancement mode field effect
transistor is produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process is
especially tailored to minimize on-state resistance. This
device has been designed especially for low voltage
applications as a replacement for digital transistors. Since
bias resistors are not required, this one N-channel FET can
replace several different digital transistors, with different bias
resistor values.
General Description
,T
FDV301N
Digital FET , N-Channel
JA
O
STG
, V
, V
Mark:301
CC
I
SOT-23
Parameter
Drain-Source Voltage, Power Supply Voltage
Gate-Source Voltage, V
Drain/Output Current
Maximum Power Dissipation
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
Thermal Resistance, Junction-to-Ambient
SuperSOT
IN
TM
-6
- Continuous
T
A
= 25
o
C unless other wise noted
SuperSOT
G
TM
-8
D
Features
SO-8
S
25 V, 0.22 A continuous, 0.5 A Peak.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Replace multiple NPN digital transistors with one DMOS
FET.
R
R
DS(ON)
DS(ON)
-55 to 150
FDV301N
IN
0.22
0.35
6.0
357
0.5
25
= 5
= 4
8
SOT-223
@ V
@ V
I N V E R T E R A P P L I C A T I O N
GS(th)
GS
G
GS
= 2.7 V
= 4.5 V.
< 1.06V.
D
June 2009
S
SOIC-16
FDV301N Rev.F1
°C/W
Units
Vcc
°C
kV
W
V
V
A
OUT
GND
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FDV301N_NB9V005 Summary of contents
Page 1
... Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient JA ©2009 Fairchild Semiconductor Corporation Features 25 V, 0.22 A continuous, 0.5 A Peak. Very low level gate drive requirements allowing direct operation in 3V circuits. V Gate-Source Zener for ESD ruggedness. ...
Page 2
Inverter Electrical Characteristics Symbol Parameter I Zero Input Voltage Output Current O (off) V Input Voltage I (off (on) R Output to Ground Resistance O (on) Electrical Characteristics (T A Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage ...
Page 3
Typical Electrical Characteristics 4. DRAIN-SOURCE VOLTAGE (V) DS Figure ...
Page 4
Typical Electrical And Thermal Characteristics 0. 0.1 0.2 0 GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics ...
Page 5
... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...