BSS138TA Diodes Zetex, BSS138TA Datasheet - Page 2

• Manufacturer Part Number: BSS138TA
• Description: MOSFET N-CH 50V 200MA SOT23-3
• Manufacturer: Diodes Zetex
• Type: Small Signalr

Specifications of BSS138TA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 3.5Ohm
• Drain-source On-volt: 50V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 200mA
• Power Dissipation: 300mW
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Compliant
• Other names: BSS138ZXTR

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain-Source Voltage
Drain-Gate Voltage R
Gate-Source Voltage
Drain Current
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes:
BSS138
Document number: DS30144 Rev. 14 - 2
0.6
0.5
0.4
0.3
0.2
0.1
4. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
5. Short duration pulse test used to minimize self-heating effect.
0
Fig. 1 Drain-Source Current vs. Drain-Source Voltage
0
website at http://www.diodes.com.
T = 25 C
j
1
V , DRAIN-SOURCE VOLTAGE (V)
GS
°
DS
2
≤ 20KΩ
Characteristic
Characteristic
Characteristic
3
@T
4
A
= 25°C unless otherwise specified
5
@T
@T
A
6
= 25°C unless otherwise specified
A
= 25°C unless otherwise specified
7
V
V
V
V
GS
GS
8
Continuous
GS
Continuous
GS
V
= 3.25V
GS
= 3.5V
= 2.75V
= 3.0V
= 2.5V
9
10
www.diodes.com
Symbol
R
BV
V
t
t
DS (ON)
D(OFF)
I
C
D(ON)
I
C
2 of 5
GS(th)
C
g
DSS
GSS
oss
FS
DSS
iss
rss
T
Symbol
Symbol
J
V
V
V
R
, T
P
DGR
GSS
DSS
I
θ JA
D
Min
100
D
0.5
50
STG
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.6
0.5
0.4
0.2
0.8
0.7
0.3
0.1
0
0
Typ
1.2
1.4
75
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.5
V
DS
V
±100
Max
GS
0.5
1.5
3.5
8.0
⎯
⎯
50
25
20
20
= 1V
Fig. 2 Transfer Characteristics
, GATE-SOURCE VOLTAGE (V)
1
-55 to +150
Unit
mS
µA
nA
pF
pF
pF
ns
ns
1.5
Ω
V
V
Value
Value
±20
200
300
417
50
50
V
V
V
V
V
V
V
V
GS
DS
GS
DS
GS
DS
DS
DD
2
= 50V, V
= V
= 25V, I
= 10V, V
= 30V, I
= 0V, I
= ±20V, V
= 10V, I
2.5
GS
, I
Test Condition
D
D
D
D
D
= 250μA
GS
GS
3
= 0.2A, f = 1.0KHz
= 0.2A, R
= 250μA
= 0.22A
DS
= 0V
= 0V, f = 1.0MHz
= 0V
3.5
-55 C °
© Diodes Incorporated
Units
Units
°C/W
mW
BSS138
mA
150 C °
°C
4
GEN
V
V
V
25 C °
January 2011
4.5
= 50Ω