BSS138TC Diodes Zetex, BSS138TC Datasheet - Page 3

• Manufacturer Part Number: BSS138TC
• Description: MOSFET N-CHAN 50V SOT23-3
• Manufacturer: Diodes Zetex

Specifications of BSS138TC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 10V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -

BSS138
Document number: DS30144 Rev. 14 - 2
Fig. 3 Drain-Source On-Resistance vs. Junction Temperature
2.45
2.25
1.65
1.45
1.25
1.05
0.85
0.65
2.05
1.85
3
2
0
4
6
5
8
7
6
5
3
0
4
2
1
1
Fig. 5 Drain-Source On-Resistance vs. Drain-Current
Fig. 7 Drain-Source On-Resistance vs. Drain-Current
0
0
-55
V
0.02 0.04
GS
= 2.5V
T , JUNCTION TEMPERATURE (°C)
0.1
j
-5
I , DRAIN-CURRENT (A)
I , DRAIN-CURRENT (A)
D
D
0.06 0.08
0.2
V
45
GS
= 4.5V
0.3
0.1
V
I = 0.5A
GS
D
0.12
= 10V
150 C °
V
I = 0.075A
95
D
0.4
GS
25 C °
150 C
-55 C
-55 C °
= 4.5V
°
25 C
0.14
°
°
0.16
0.5
145
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1.8
1.6
1.4
1.2
0.6
0.8
0.4
0.2
Fig. 4 Gate Threshold Voltage vs. Junction Temperature
0.5
1.5
3.5
4
2.5
9
6
5
3
0
8
7
2
0
1
2
-55
1
Fig. 6 Drain-Source On-Resistance vs. Drain-Current
0
3
1
2
Fig. 8 Drain-Source On Resistance vs. Drain-Current
0
0
-25
T , JUNCTION TEMPERATURE (°C)
0.05
j
0.1
I , DRAIN-CURRENT (A)
D
I , DRAIN-CURRENT (A)
5
D
0.1
V
0.2
GS
35
= 10V
65
V
0.15
GS
0.3
= 2.75V
95
I = 1.0mA
D
-55 C °
150 C °
25 C °
0.2
0.4
150 C °
125
-55 C °
25 C
© Diodes Incorporated
°
BSS138
0.25
January 2011
155
0.5