FDC608PZ Fairchild Semiconductor, FDC608PZ Datasheet

MOSFET P-CH 20V 5.8A SSOT-6

FDC608PZ

Manufacturer Part Number
FDC608PZ
Description
MOSFET P-CH 20V 5.8A SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDC608PZ

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 5.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
5.8A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 4.5V
Input Capacitance (ciss) @ Vds
1330pF @ 10V
Power - Max
800mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.03 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
22 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
5.8 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
5.8A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
30mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC608PZTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDC608PZ
Manufacturer:
Fairchild Semiconductor
Quantity:
116 226
Part Number:
FDC608PZ
Manufacturer:
FAIRCHILD
Quantity:
3 477
Part Number:
FDC608PZ
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDC608PZ
0
Company:
Part Number:
FDC608PZ
Quantity:
6 000
FDC608PZ
P-Channel 2.5V Specified PowerTrench
General Description
This P-Channel 2.5V specified MOSFET is produced
using
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance.
These devices are well suited for battery power
applications: load switching and power management,
battery power circuits, and DC/DC conversions.
©2006 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
θJC
, T
Device Marking
STG
Fairchild
.608Z
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
Semiconductor’s
D
TM
S
– Continuous
– Pulsed
FDC608PZ
Device
D
Parameter
D
G
advanced
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
®
MOSFET
Features
• –5.8 A, –20 V.
• Low Gate Charge
• High performance trench technology for extremely
• SuperSOT
low R
smaller than standard SO–8) low profile (1mm thick).
DS(ON)
1
2
3
TM
–6 package: small footprint (72%
Tape width
–55 to +150
8mm
R
R
Ratings
DS(ON)
DS(ON)
–5.8
–20
±12
–20
1.6
0.8
78
30
= 30 mΩ @ V
= 43 mΩ @ V
6
5
4
June 2006
GS
GS
FDC608PZ Rev B (W)
3000 units
Quantity
= –4.5 V
= –2.5 V
Units
°C/W
°C/W
°C
W
V
V
A
tm

Related parts for FDC608PZ

FDC608PZ Summary of contents

Page 1

... Reel Size 7’’ June 2006 mΩ –4.5 V DS(ON mΩ –2.5 V DS(ON –6 package: small footprint (72 Ratings Units –20 V ±12 V –5.8 A –20 1.6 W 0.8 °C –55 to +150 °C/W 78 °C/W 30 Tape width Quantity 8mm 3000 units FDC608PZ Rev B (W) tm ...

Page 2

... –5 100A/µ determined by the user's board design. Min Typ Max Units –20 V –10 mV/°C µA –1 ±10 µA –0.4 –1.0 –1 mV/° mΩ =125°C – 1330 pF 270 pF 230 pF Ω 145 –1.3 A –0.7 –1.2 V (Note FDC608PZ Rev B (W) ...

Page 3

... A 0.01 o 125 C 0.001 o C 0.0001 0 0.2 2 2.5 3 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -2. 125 GATE TO SOURCE VOLTAGE ( -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC608PZ Rev B ( 1.4 ...

Page 4

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 156°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 156 C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDC608PZ Rev B (W) 10 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ HiSeC™ ...

Related keywords