FQT4N25TF Fairchild Semiconductor, FQT4N25TF Datasheet - Page 3

• Manufacturer Part Number: FQT4N25TF
• Description: MOSFET N-CH 250V 0.83A SOT-223
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQT4N25TF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.75 Ohm @ 415mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 830mA
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 5.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 200pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.75 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 1.28 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.83 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
350
300
250
200
150
100
10
10
50
-1
0
0
8
6
4
2
0
10
10
0
Figure 5. Capacitance Characteristics
-1
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom : 5.5 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
2
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
10
D
10
, Drain Current [A]
0
0
V
GS
C
C
C
V
= 20V
oss
rss
iss
GS
4
= 10V
C
C
C
※ Notes :
iss
oss
rss
1. 250μ s Pulse Test
2. T
10
10
= C
= C
= C
※ Note : T
6
1
1
C
gs
gd
= 25℃
ds
+ C
+ C
※ Notes :
gd
1. V
2. f = 1 MHz
gd
(C
J
GS
= 25℃
ds
= shorted)
= 0 V
8
10
10
10
10
12
10
-1
-1
8
6
4
2
0
0
0
0.2
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
Variation vs. Source Current
0.4
1
4
150℃
V
V
Q
25℃
and Temperature
GS
SD
150℃
G
0.6
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
V
2
DS
V
DS
25℃
V
= 200V
DS
= 125V
0.8
= 50V
6
-55℃
3
1.0
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= 50V
= 0V
4
1.2
D
= 3.6 A
1.4
Rev. A, May 2001
10
5