MOSFET N-CHAN 100V SOT23-6

ZXMN10A08E6TC

Manufacturer Part NumberZXMN10A08E6TC
DescriptionMOSFET N-CHAN 100V SOT23-6
ManufacturerDiodes Zetex
ZXMN10A08E6TC datasheet
 


Specifications of ZXMN10A08E6TC

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs250 mOhm @ 3.2A, 10VDrain To Source Voltage (vdss)100V
Current - Continuous Drain (id) @ 25° C1.5AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs7.7nC @ 10VInput Capacitance (ciss) @ Vds405pF @ 50V
Power - Max1.1WMounting TypeSurface Mount
Package / CaseSOT-23-6Lead Free Status / RoHS StatusLead free / RoHS Compliant
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Product Summary
V
R
(BR)DSS
DS(on)
100V
0.25Ω
Description and Applications
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, this makes it ideal for
high efficiency power management applications.
DC-DC Converters
Power management functions
Disconnect Switches
Motor control
SOT23-6
TOP VIEW
Ordering Information
Product
ZXMN10A08E6TA
ZXMN10A08E6TC
Marking Information
ZXMN10A08E6
Document Number DS31909 Rev. 7 - 2
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Features and Benefits
Low on-resistance
I
D
Fast switching speed
T
= 25°C
A
Qualified to AEC-Q101 Standards for High Reliability
1.9A
Mechanical Data
Case: SOT23-6
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (approximate)
D
D
D
D
G
S
Package Pin Out
Reel size (inches)
Tape width (mm)
7
13
10A8
10A8 = Product Type Marking Code
1 of 8
www.diodes.com
A Product Line of
Diodes Incorporated
ZXMN10A08E6
D
G
S
Equivalent Circuit
Quantity per reel
8
3,000
8
10,000
October 2009
© Diodes Incorporated

ZXMN10A08E6TC Summary of contents

  • Page 1

    ... Disconnect Switches • Motor control SOT23-6 TOP VIEW Ordering Information Product ZXMN10A08E6TA ZXMN10A08E6TC Marking Information ZXMN10A08E6 Document Number DS31909 Rev 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features and Benefits • Low on-resistance ...

  • Page 2

    Maximum Ratings @T = 25°C unless otherwise specified A Characteristic Drain-Source voltage Gate-Source voltage Continuous Drain current V = 10V GS Pulsed Drain current (Note 3) Continuous Source current (Body diode) (Note 2) Pulsed Source current (Body diode) (Note 3) ...

  • Page 3

    Thermal Characteristics 10 R DS(on) Limited 100m 100ms 10ms Single Pulse 10m T =25°C amb 100m 1 V Drain-Source Voltage (V) DS Safe Operating Area 120 T =25°C amb 100 80 D=0 D=0.2 20 100µ ...

  • Page 4

    Electrical Characteristics @T Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-Resistance (Note 4) Forward Transconductance (Notes 4 & 6) Diode Forward Voltage (Note 4) Reverse recovery time ...

  • Page 5

    Typical Characteristics 25°C 1 0.1 0.01 0 Drain-Source Voltage (V) DS Output Characteristics V = 10V 150° Gate-Source Voltage (V) GS Typical Transfer Characteristics 100 3.5V V ...

  • Page 6

    Typical Characteristics - continued 600 500 400 C ISS 300 200 100 0 0 Drain - Source Voltage (V) DS Capacitance v Drain-Source Voltage Test Circuits Charge Basic gate ...

  • Page 7

    Package Outline Dimensions DIM 0.95 REF e1 1.90 REF L Suggested Pad Layout ZXMN10A08E6 Document Number DS31909 Rev Millimeters Min. Max. 0.90 1.45 0.00 0.15 0.90 1.30 ...

  • Page 8

    DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY ...