FDD8580 Fairchild Semiconductor, FDD8580 Datasheet

MOSFET N-CH 20V 35A DPAK

FDD8580

Manufacturer Part Number
FDD8580
Description
MOSFET N-CH 20V 35A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD8580

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
35A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
1445pF @ 10V
Power - Max
49.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0066 Ohms
Forward Transconductance Gfs (max / Min)
61 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
35 A
Power Dissipation
49.5 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD8580TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD8580
Manufacturer:
FAIRCHILD
Quantity:
30 000
©2006 Fairchild Semiconductor Corporation
FDD8580/FDU8580 Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDD8580/FDU8580
N-Channel PowerTrench
20V, 35A, 9mΩ
Features
V
V
I
E
P
T
R
R
R
D
J
DS
GS
AS
D
θJC
θJA
θJA
Max r
Max r
Low gate charge: Q
Low gate resistance
100% Avalanche tested
RoHS compliant
Symbol
, T
Device Marking
STG
FDD8580
FDU8580
DS(on)
DS(on)
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package Limited)
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
Thermal Resistance, Junction to Case TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,TO-251
Thermal Resistance, Junction to Ambient TO-252,1in
= 9mΩ at V
=13mΩ at V
g(TOT)
GS
GS
= 19nC(Typ), V
= 10V, I
= 4.5V, I
-Continuous (Die Limited)
-Pulsed
FDD8580
FDU8580
Device
D
D
= 35A
= 33A
Parameter
GS
T
C
= 10V
= 25°C unless otherwise noted
G D S
TO-252AA
TO-251AA
Package
®
MOSFET
1
(TO-251AA)
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
Application
DS(on)
2
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
I-PAK
copper pad area
and fast switching speed.
N/A(Tube)
Reel Size
(Note 2)
(Note 1)
13’’
G
Tape Width
-55 to 175
12mm
Ratings
N/A
49.5
3.03
±20
159
100
20
35
58
66
52
D
S
www.fairchildsemi.com
2500 units
Quantity
July 2006
75 units
Units
°C/W
°C/W
°C/W
mJ
°C
W
V
V
A
tm

Related parts for FDD8580

FDD8580 Summary of contents

Page 1

... Package Marking and Ordering Information Device Marking Device FDD8580 FDD8580 FDU8580 FDU8580 ©2006 Fairchild Semiconductor Corporation FDD8580/FDU8580 Rev. A ® MOSFET General Description This N-Channel MOSFET has been designed specifically = 35A D to improve the overall efficiency of DC/DC converters using = 33A either synchronous or conventional switching PWM D controllers ...

Page 2

... Drain-Source Diode Characteristics V Source to Drain Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes: 1: Pulse time < 300μs, Duty cycle = 2 Starting 0.3mH 21A , FDD8580/FDU8580 Rev 25°C unless otherwise noted J Test Conditions I = 250μ 250μA, referenced to D 25° 16V ...

Page 3

... Figure 3. Normalized On Resistance vs Junction Temperature 120 PULSE DURATION = 80 μ s DUTY CYCLE = 0.5%MAX 100 175 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDD8580/FDU8580 Rev 25°C unless otherwise noted J 4.0 μ s 3.5 3 4.0V GS 2.5 2 3.5V GS 1.5 1.0 0 Figure 2. Normalized 120 160 200 Figure 4. ...

Page 4

... Unclamped Inductive Switching Capability 500 100 10 LIMITED BY PACKAGE 1 OPERATION IN THIS SINGLE PULSE AREA MAY MAX RATED LIMITED BY r DS(on 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDD8580/FDU8580 Rev 25°C unless otherwise noted J 3000 1000 V = 10V DD = 13V DD 100 15 20 0.1 Figure ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0.01 0.005 - Figure 13. Transient Thermal Response Curve FDD8580/FDU8580 Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION ( NOTES: DUTY FACTOR PEAK θJC θ www.fairchildsemi.com 1 ...

Page 6

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDD8580/FDU8580 Rev. A OCX™ SILENT SWITCHER OCXPro™ SMART START™ ® OPTOLOGIC SPM™ OPTOPLANAR™ ...

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