FDD306P Fairchild Semiconductor, FDD306P Datasheet
FDD306P
Specifications of FDD306P
Available stocks
Related parts for FDD306P
FDD306P Summary of contents
Page 1
... Thermal Resistance, Junction-to-Ambient θ Thermal Resistance, Junction-to-Ambient θ JA Package Marking and Ordering Information Device Marking FDD306P FDD306P ©2005 Fairchild Semiconductor Corporation FDD306P Rev. C Applications ■ DC/DC converter = –4 –2 General Description = –1 This P-Channel 1.8V Specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process ...
Page 2
... JC θ CA Scale letter size paper 2. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0% 3. Maximum current is calculated as ----------------------- - Starting T = 25° TBD -6. FDD306P Rev 25°C unless otherwise noted A Test Conditions = –250 µ –250 µ A, Referenced to 25 ° – ± ...
Page 3
... T , JUNCTION TEMPERATURE (°C) J Figure 3. On-Resistance Variation withTemperature GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. FDD306P Rev. C 2.5 V -3.0V 2 -2.5V 1.5 -2.0V -1. Figure 2. On-Resistance Variation with 0.1 0.08 0.06 0.04 T 0.02 0 100 125 150 175 0 Figure 4. On-Resistance Variation with 100 = -55° ...
Page 4
... D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDD306P Rev. C 2400 2000 -8V 1600 -6V 1200 800 400 Figure 8. Capacitance Characteristics. ...
Page 5
... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDD306P Rev. C IntelliMAX™ POP™ ISOPLANAR™ Power247™ PowerEdge™ LittleFET™ PowerSaver™ MICROCOUPLER™ PowerTrench MicroFET™ ...