FDD6N25TM Fairchild Semiconductor, FDD6N25TM Datasheet - Page 2

• Manufacturer Part Number: FDD6N25TM
• Description: MOSFET N-CH 250V 4.4A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDD6N25TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohms
• Forward Transconductance Gfs (max / Min): 5.5 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 12 ns
• Rise Time: 25 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD6N25TMTR

FDD6N25 / FDU6N25 Rev. A
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3.7mH, I
3. I
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Off Characteristics
BV
∆BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
∆T
≤ 4.4A, di/dt ≤ 200A/µs, V
DSS
FDD6N25
FDD6N25
FDU6N25
J
AS
= 4.4A, V
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
= 50V, R
DD
≤ BV
Parameter
FDD6N25TM
FDU6N25TU
FDD6N25TF
Device
G
DSS
= 25Ω, Starting T
, Starting T
J
= 25°C
T
C
J
= 25°C unless otherwise noted
= 25°C
Package
D-PAK
D-PAK
I-PAK
V
I
V
V
V
V
V
V
V
V
f = 1.0MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250µA, Referenced to 25°C
/dt =100A/µs
= 25Ω
= 250V, V
= 200V, T
= V
= 40V, I
= 25V, V
= 200V, I
= 0V, I
= 30V, V
= -30V, V
= 10V, I
= 125V, I
= 10V
= 0V, I
= 0V, I
GS
2
, I
D
S
S
D
D
D
Conditions
= 4.4A
= 6A
= 250µA
DS
GS
D
D
DS
= 2.2A
GS
C
= 2.2A
= 250µA
= 6A
= 6A
Reel Size
= 125°C
= 0V
= 0V,
= 0V
= 0V
380mm
380mm
-
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
16mm
16mm
Min.
250
-
3.0
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Typ.
0.25
0.55
194
145
0.9
5.5
4.5
1.5
1.8
25
38
10
12
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5
7
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Quantity
Max Units
-100
100
250
www.fairchildsemi.com
5.0
1.1
4.4
1.4
18
10
50
30
60
24
34
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1
--
8
6
--
--
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--
2500
2000
70
V/°C
µA
µA
nA
nA
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V