FDD6N25TM Fairchild Semiconductor, FDD6N25TM Datasheet - Page 4

• Manufacturer Part Number: FDD6N25TM
• Description: MOSFET N-CH 250V 4.4A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDD6N25TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 6nC @ 10V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohms
• Forward Transconductance Gfs (max / Min): 5.5 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 12 ns
• Rise Time: 25 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD6N25TMTR

FDD6N25 / FDU6N25 Rev. A
Typical Performance Characteristics
Figure 9. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
10
10
10
10
-1
-2
1
0
10
1.2
1.1
1.0
0.9
0.8
0
-100
Operation in This Area
is Limited by R
vs. Temperature
-50
V
DS(on)
T
DS
J
, Drain-Source Voltage [V]
, Junction Temperature [
0
10
1 0
1 0
1
-1
1 0
0
-5
50
D = 0 .5
Figure 11. Transient Thermal Response Curve
0 .0 2
0 .0 1
0 .0 5
0 .2
0 .1
100
1 0
* Notes :
100 ms
o
DC
1. T
2. T
3. Single Pulse
C]
-4
10 ms
s in g le p u ls e
* Notes :
C
J
= 25
= 150
1. V
2. I
t
1
1 ms
D
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
10
GS
= 250
o
150
C
o
2
= 0 V
C
100
µ
A
µ
1 0
s
-3
200
(Continued)
4
1 0
-2
5
4
3
2
1
0
25
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
1 0
* N o te s :
P
-1
1 . Z
2 . D u ty F a c to r , D = t
3 . T
DM
50
θ
J M
J C
-50
( t) = 2 .5
- T
C
t
1
= P
T
t
C
2
1 0
T
vs. Temperature
, Case Temperature [
D M
J
o
, Junction Temperature [
0
C /W M a x .
* Z
0
75
1
θ
/t
J C
2
( t)
50
vs. Case Temperature
1 0
100
1
o
C]
100
o
C]
125
* Notes :
1. V
2. I
150
D
GS
= 2.2 A
www.fairchildsemi.com
= 10 V
150
200