FDD6N25TM Fairchild Semiconductor, FDD6N25TM Datasheet - Page 7

MOSFET N-CH 250V 4.4A DPAK

FDD6N25TM

Manufacturer Part Number
FDD6N25TM
Description
MOSFET N-CH 250V 4.4A DPAK
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDD6N25TM

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 2.2A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
4.4A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
6nC @ 10V
Input Capacitance (ciss) @ Vds
250pF @ 25V
Power - Max
50W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.9 Ohms
Forward Transconductance Gfs (max / Min)
5.5 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
4.4 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Fall Time
12 ns
Rise Time
25 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD6N25TMTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD6N25TM
Quantity:
120
Company:
Part Number:
FDD6N25TM
Quantity:
1 545
Mechanical Dimensions
D-PAK
7
www.fairchildsemi.com
FDD6N25 / FDU6N25 Rev. A

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