FDD8878 Fairchild Semiconductor, FDD8878 Datasheet
FDD8878
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FDD8878 Summary of contents
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... High power and current handling capability RoHS Compliant D-PAK (TO-252) ©2008 Fairchild Semiconductor Corporation FDD8878 / FDU8878 Rev. A4 ® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM = 35A controllers ...
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... Drain to Source Breakdown Voltage VDSS I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics V Gate to Source Threshold Voltage GS(TH) r Drain to Source On Resistance DS(ON) ©2008 Fairchild Semiconductor Corporation FDD8878 / FDU8878 Rev 25°C unless otherwise noted C Parameter 10V) (Note 4.5V) (Note 10V, with ...
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... Turn-Off Time OFF Drain-Source Diode Characteristics V Source to Drain Diode Voltage SD t Reverse Recovery Time rr Q Reverse Recovered Charge RR Notes: 1: Package current limitation is 35A. 2: Starting T = 25° 65uH 28A ©2008 Fairchild Semiconductor Corporation FDD8878 / FDU8878 Rev 15V 0V 1MHz V = 0.5V 1MHz 10V ...
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... SINGLE PULSE 0. Figure 3. Normalized Maximum Transient Thermal Impedance 500 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION V = 4.5V GS 100 V = 10V ©2008 Fairchild Semiconductor Corporation FDD8878 / FDU8878 Rev 25°C unless otherwise noted 150 175 125 Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( ...
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... GS Figure 7. Transfer Characteristics 35A GATE TO SOURCE VOLTAGE (V) GS Figure 9. Drain to Source On Resistance vs Gate Voltage and Drain Current ©2008 Fairchild Semiconductor Corporation FDD8878 / FDU8878 Rev 25°C unless otherwise noted C 500 100 100 s 10 1ms 10ms 0.01 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6 ...
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... Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 2000 1000 C C RSS GD 100 1MHz DRAIN TO SOURCE VOLTAGE (V) DS Figure 13. Capacitance vs Drain to Source Voltage ©2008 Fairchild Semiconductor Corporation FDD8878 / FDU8878 Rev 25°C unless otherwise noted C 1. 250 1.05 1.00 0.95 0.90 80 120 160 200 -80 ...
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... Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK Figure 15. Unclamped Energy Test Circuit g(REF) Figure 17. Gate Charge Test Circuit Figure 19. Switching Time Test Circuit ©2008 Fairchild Semiconductor Corporation FDD8878 / FDU8878 Rev DUT 0.01 Figure 16. Unclamped Energy Waveforms gs2 DUT ...
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... The area, in square inches or square centimeters is the top copper area including the gate and source pads. 23.84 33.32 + ------------------------------------ - 0.268 + Area 154 33.32 + --------------------------------- - 1.73 + Area ©2008 Fairchild Semiconductor Corporation FDD8878 / FDU8878 Rev and the JM 125 , application’s ambient 100 never exceeded (EQ 0.01 (0.0645 Figure 21 ...
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... PSPICE Electrical Model .SUBCKT FDD8878 rev February 2004 8.6e- 7.2e-10 Cin 6 8 8e-10 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 32.97 Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 5.4e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 2e-9 RLgate RLdrain ...
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... Fairchild Semiconductor Corporation FDD8878 / FDU8878 Rev. A4 DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + ...
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... Fairchild Semiconductor Corporation FDD8878 / FDU8878 Rev. A4 JUNCTION th RTHERM1 6 RTHERM2 5 RTHERM3 4 RTHERM4 3 RTHERM5 ...
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... Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2008 Fairchild Semiconductor Corporation FDD8878 / FDU8878 Rev. A4 FPS™ PDP-SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench Global Power Resource SM Programmable Active Droop™ ...