FDD8882 Fairchild Semiconductor, FDD8882 Datasheet
FDD8882
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FDD8882 Summary of contents
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... D-PAK TO-252 (TO-252) ©2008 Fairchild Semiconductor Corporation FDD8882/FDU8882 Rev. C ® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r and fast switching speed ...
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... Off Characteristics B Drain to Source Breakdown Voltage VDSS I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics V Gate to Source Threshold Voltage GS(TH) r Drain to Source On Resistance DS(ON) FDD8882/FDU8882 Rev 25°C unless otherwise noted C Parameter 10V) (Note 4.5V) (Note 10V, with C/W) ...
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... Turn-Off Delay Time d(OFF) t Fall Time f t Turn-Off Time OFF Drain-Source Diode Characteristics V Source to Drain Diode Voltage SD t Reverse Recovery Time rr Q Reverse Recovered Charge RR Notes: 1: Package current limitation is 35A. 2: Starting T = 25° 0.1mH 28A FDD8882/FDU8882 Rev 15V 0V 1MHz V = 0.5V 1MHz 10V 10V) GS ...
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... SINGLE PULSE 0. Figure 3. Normalized Maximum Transient Thermal Impedance 600 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION V = 4.5V GS 100 FDD8882/FDU8882 Rev 25°C unless otherwise noted 150 175 125 Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4 ...
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... Figure 7. Transfer Characteristics 20 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX I = 35A GATE TO SOURCE VOLTAGE (V) GS Figure 9. Drain to Source On Resistance vs Gate Voltage and Drain Current FDD8882/FDU8882 Rev 25°C unless otherwise noted C 500 100 100 s 10 1ms 10ms DC 1 0.001 60 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6 ...
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... T , JUNCTION TEMPERATURE ( J Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 3000 1000 C C RSS 0V 1MHz GS 100 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 13. Capacitance vs Drain to Source Voltage FDD8882/FDU8882 Rev 25°C unless otherwise noted C 1. 250 1.05 1.00 0.95 0.90 80 120 160 200 - Figure 12. Normalized Drain to Source ...
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... Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK Figure 15. Unclamped Energy Test Circuit g(REF) Figure 17. Gate Charge Test Circuit Figure 19. Switching Time Test Circuit FDD8882/FDU8882 Rev DUT I AS 0.01 0 Figure 16. Unclamped Energy Waveforms gs2 DD - DUT g(REF) 0 Figure 18. Gate Charge Waveforms ...
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... The area, in square inches or square centimeters is the top copper area including the gate and source pads. 23.84 33.32 + ------------------------------------ - 0.268 + Area 154 33.32 + --------------------------------- - 1.73 + Area FDD8882/FDU8882 Rev and the JM 125 , application’s ambient 100 never exceeded (EQ 0.01 (0.0645 Figure 21 ...
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... PSPICE Electrical Model .SUBCKT FDD8882 rev October 2004 9e- 9e-10 Cin 6 8 1.55e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 34.1 Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 8.6e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 2.67e-9 RLgate RLdrain RLsource 3 7 26.7 ...
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... FDD8882/FDU8882 Rev. C DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + ...
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... RTHERM1 TH 6 5.3e-2 RTHERM2 6 5 2.2e-1 RTHERM3 5 4 2.9e-1 RTHERM4 4 3 3.9e-1 RTHERM5 3 2 6.0e-1 RTHERM6 2 TL 6.6e-1 SABER Thermal Model SABER thermal model FDD8882T template thermal_model th tl thermal_c th ctherm.ctherm1 th 6 =5.6e-4 ctherm.ctherm2 6 5 =6.8e-4 ctherm.ctherm3 5 4 =2.0e-3 ctherm.ctherm4 4 3 =2.8e-3 ctherm ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD8882/FDU8882 Rev. C FPS™ PDP-SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench Global Power Resource SM Programmable Active Droop™ ...