FQPF3P20 Fairchild Semiconductor, FQPF3P20 Datasheet

MOSFET P-CH 200V 2.2A TO-220F

FQPF3P20

Manufacturer Part Number
FQPF3P20
Description
MOSFET P-CH 200V 2.2A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF3P20

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.7 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 10V
Input Capacitance (ciss) @ Vds
250pF @ 25V
Power - Max
32W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQPF3P20
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQPF3P20
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
QFET P-CHANNEL
FEATURES
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE
1999 Fairchild Semiconductor Corporation
Advanced New Design
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge: 6.0nC (Typ.)
Extended Safe Operating Area
Lower R
T
Symbol
Symbol
J
V
dv/dt
R
R
V
E
, T
E
I
I
P
T
DSS
DM
I
AR
GS
AR
D
AS
D
L
JC
JA
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and Storage
Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
: 2.06
(Typ.)
Junction-to-Ambient
Junction-to-Case
Characteristics
Characteristics
C
= 25 C)
C
C
= 25 C)
= 100 C)
Typ.
55 to +150
Value
0.26
150
300
1.39
3.2
200
32
2.2
8.8
2.2
5.5
30
Max.
62.5
3.9
TO-220F
1. Gate 2. Drain 3. Source
BV
R
I
D
DS(ON)
= 2.2A
DSS
1
2
3
= 200V
= 2.7
FQPF3P20
Units
W/ C
V/ns
Units
mJ
mJ
W
C/W
V
A
A
V
A
C
REV. B
1

Related parts for FQPF3P20

FQPF3P20 Summary of contents

Page 1

... Purposes, 1/8” from case for 5-seconds THERMAL RESISTANCE Symbol Characteristics R Junction-to-Case JC R Junction-to-Ambient JA 1999 Fairchild Semiconductor Corporation Value 200 = 100 C) 1.39 C 8.8 150 2.2 3 +150 300 Typ. FQPF3P20 BV = 200V DSS R = 2.7 DS(ON 2.2A D TO-220F Gate 2. Drain 3. Source Units V/ Max. Units 3.9 C/W 62 ...

Page 2

... FQPF3P20 ELECTRICAL CHARACTERISTICS Symbol Characteristics BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage, Forward I GSS Gate-Source Leakage, Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

Page 3

... C oss rss ¡Ø Note ; MHz FQPF3P20 Fig 2. Transfer Characteristics 150¡É 25¡É -55¡É ¡Ø Note -40V DS 2. 250¥ìs Pulse Test Gate-Source Voltage [V] GS 150¡É 25¡É ¡Ø Note : 250¥ìs Pulse Test ...

Page 4

... FQPF3P20 Fig 7. Breakdown Voltage vs. Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Fig 9. Max. Safe Operating Area Operation in This Area is Limited by R DS(on ¡Ø Notes : 150 Single Pulse - Drain-Source Voltage [ 2.5 2.0 1.5 1.0 ¡Ø Note : 0 -250 ¥ì ...

Page 5

... Fig 13. Resistive Switching Test Circuit & Waveforms -10V Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms -10V V GS Same Type as DUT -10V DUT 0.5 rated DUT DUT DSS FQPF3P20 Charge off d(on) r d(off) f 10% 90 DSS DSS ---- ---- ---- ---- -------------------- -------------------- = = = ...

Page 6

... FQPF3P20 Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) 6 DUT + Driver R G Compliment of DUT (N-Channel) • dv/dt controlled by R • I controlled by pulse period S Gate Pulse Width Gate Pulse Width Gate Pulse Width -------------------------- -------------------------- ...

Page 7

... QFET P-CHANNEL TO-220F Package Dimensions TO-220F (FS PKG CODE AQ) 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 FQPF3P20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters September 1999, Rev B 7 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx TM CoolFET TM CROSSVOLT CMOS TM FACT TM FACT Quiet Seties TM ® FAST FASTr TM GTO TM HiSeC TM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN ...

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