FDC602P_F095 Fairchild Semiconductor, FDC602P_F095 Datasheet
FDC602P_F095
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FDC602P_F095 Summary of contents
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... Thermal Characteristics Thermal Resistance, Junction-to-Ambient R JA Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device .602 FDC602P 2001 Fairchild Semiconductor Corporation Features –5.5 A, –20 V Fast switching speed High performance trench technology for extremely low R DS(ON =25 C unless otherwise noted ...
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Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS Breakdown Voltage Temperature BV DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, Forward GSSF I Gate–Body Leakage, Reverse GSSR On Characteristics (Note 2) ...
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Typical Characteristics 20 V =-4.5V GS -3.0V 16 -3.5V -2. 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -5. -4.5V GS ...
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Typical Characteristics 5 V =-5. -5. GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 10ms 100ms 1s 1 10s ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...