FDC602P_F095 Fairchild Semiconductor, FDC602P_F095 Datasheet - Page 3

• Manufacturer Part Number: FDC602P_F095
• Description: MOSFET P-CH 20V 5.5A 6SSOT
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC602P_F095

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 35 mOhm @ 5.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1456pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
20
16
12
20
16
12
8
4
0
8
4
0
0.5
1.6
1.4
1.2
0.8
0.6
0
Figure 3. On-Resistance Variation with
V
1
Figure 1. On-Region Characteristics.
-50
DS
Figure 5. Transfer Characteristics.
V
-3.5V
= -5.0V
GS
V
I
GS
D
=-4.5V
= -5.5A
0.5
-25
= -4.5V
1
-V
-V
-2.5V
DS
GS
, DRAIN TO SOURCE VOLTAGE (V)
T
, GATE TO SOURCE VOLTAGE (V)
0
J
, JUNCTION TEMPERATURE (
Temperature.
1
-3.0V
1.5
25
1.5
50
T
A
= -55
2
75
2
o
C
-2.0V
100
o
C)
125
2.5
o
2.5
C
125
25
o
C
150
3
3
Figure 6. Body Diode Forward Voltage Variation
0.12
0.08
0.06
0.04
0.02
0.0001
0.1
0.001
1.8
1.6
1.4
1.2
0.8
0.01
0
100
0.1
with Source Current and Temperature.
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
2
1
1.5
10
1
0
0
Drain Current and Gate Voltage.
T
V
A
GS
= 25
V
=-4.5V
GS
2
0.2
Gate-to-Source Voltage.
o
T
= -2.5V
C
-V
A
-V
SD
= 125
GS
, BODY DIODE FORWARD VOLTAGE (V)
5
2.5
, GATE TO SOURCE VOLTAGE (V)
0.4
o
C
-3.0V
-I
D
T
, DRAIN CURRENT (A)
A
= 125
25
3
o
0.6
C
-3.5V
o
C
10
-55
3.5
0.8
o
-4.0V
C
4
1
15
I
D
= -3.0A
FDC602P Rev C(W)
-4.5V
4.5
1.2
20
1.4
5