FDD8876 Fairchild Semiconductor, FDD8876 Datasheet

MOSFET N-CH 30V 73A D-PAK

FDD8876

Manufacturer Part Number
FDD8876
Description
MOSFET N-CH 30V 73A D-PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD8876

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.2 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
73A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
47nC @ 10V
Input Capacitance (ciss) @ Vds
1700pF @ 15V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.011 Ohms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
73 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
37 ns
Minimum Operating Temperature
- 55 C
Rise Time
91 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD8876
Manufacturer:
FAIRCHILD
Quantity:
30 000
©2008 Fairchild Semiconductor Corporation
FDD8876 / FDU8876
N-Channel PowerTrench
30V, 73A, 8.2m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
Applications
• DC/DC converters
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
E
P
T
R
R
R
DS(ON)
D
GS
J
DSS
AS
D
Symbol
, T
JC
JA
JA
STG
and fast switching speed.
G
S
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, 1in
(TO-252)
D-PAK
TO-252
amb
C
C
= 25
= 25
o
C
D
= 25
o
o
C, V
C, V
o
C, V
®
GS
GS
MOSFET
GS
= 10V) (Note 1)
= 4.5V) (Note 1)
Parameter
T
= 10V, with R
C
= 25°C unless otherwise noted
G D S
JA
= 52
Features
• r
• r
• High performance trench technology for extremely low
• Low gate charge
• High power and current handling capability
RoHS Compliant
r
DS(ON)
DS(ON)
DS(ON)
(TO-251AA)
o
2
C/W)
copper pad area
I-PAK
= 8.2m , V
= 10m , V
GS
GS
= 4.5V, I
= 10V, I
-55 to 175
Ratings
Figure 4
D
D
G
0.47
2.14
= 35A
= 35A
100
30
73
66
15
95
70
52
20
N
April 2008
D
S
FDD8876 / FDU8876 Rev. A3
Units
W/
o
o
o
tm
C/W
C/W
C/W
mJ
o
W
V
A
V
A
A
A
C
o
C

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FDD8876 Summary of contents

Page 1

... High power and current handling capability RoHS Compliant • I-PAK (TO-251AA 25°C unless otherwise noted C Parameter 10V) (Note 4.5V) (Note 10V, with C/ copper pad area N April 2008 tm = 10V 35A 4.5V 35A Ratings Units Figure 0. -55 to 175 C o 2.14 C/W o 100 C C/W FDD8876 / FDU8876 Rev. A3 ...

Page 2

... V = 10V Tape Width Quantity 13” 12mm 2500 units N/A 75 units Min Typ Max 150 250 100 1.2 - 2.5 - 0.0066 0.0082 - 0.008 0.010 - 0.011 0.013 - 1700 - - 330 - - 200 - - 2 15V DD - 1.4 1.9 = 35A - 4 1.0mA - 2 8 149 - 122 - - 1. 1 FDD8876 / FDU8876 Rev. A3 Units ...

Page 3

... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability CURRENT LIMITED BY PACKAGE V = 10V 4. 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDD8876 / FDU8876 Rev. A3 175 ...

Page 4

... AS DSS (L/R)ln[(I *R)/(1.3*RATED +1] AS DSS DD STARTING STARTING T = 150 TIME IN AVALANCHE (ms) AV Capability 10V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0.2 0.4 0.6 0 DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( C) J FDD8876 / FDU8876 Rev 1.0 = 35A 200 ...

Page 5

... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS OSS Figure 14. Gate Charge Waveforms for Constant I = 250 120 160 JUNCTION TEMPERATURE ( 15V DD WAVEFORMS IN DESCENDING ORDER 35A GATE CHARGE (nC) g Gate Current FDD8876 / FDU8876 Rev. A3 200 30 ...

Page 6

... Figure 19. Switching Time Test Circuit ©2008 Fairchild Semiconductor Corporation DUT I AS 0.01 0 Figure 16. Unclamped Energy Waveforms gs2 DD - DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g( g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDD8876 / FDU8876 Rev 10V 90% ...

Page 7

... C/ never exceeded (EQ 0.01 (0.0645 Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 33.32+ 23.84/(0.268+Area) EQ 33.32+ 154/(1.73+Area) EQ (0.645) (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDD8876 / FDU8876 Rev. A3 ...

Page 8

... PSPICE Electrical Model .SUBCKT FDD8876 rev January 2004 1.9e 1.6e-9 Cin 6 8 1.55e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 33.15 Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 4.7e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 1.7e-9 RLgate RLdrain ...

Page 9

... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 RGATE + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDD8876 / FDU8876 Rev. A3 DRAIN 2 SOURCE 3 ...

Page 10

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDD8876 / FDU8876 Rev. A3 ...

Page 11

... Fairchild Semiconductor. The datasheet is for reference information only. The Power Franchise ® tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ ® Definition FDD8876 / FDU8876 Rev. A3 ® Rev. I34 ...

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