FDD8880 Fairchild Semiconductor, FDD8880 Datasheet

MOSFET N-CH 30V 58A D-PAK

FDD8880

Manufacturer Part Number
FDD8880
Description
MOSFET N-CH 30V 58A D-PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD8880

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 35A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
58A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
31nC @ 10V
Input Capacitance (ciss) @ Vds
1260pF @ 15V
Power - Max
55W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.009 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
13 A
Power Dissipation
55000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Fall Time
32 ns
Rise Time
91 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2008 Fairchild Semiconductor Corporation
FDD8880
N-Channel PowerTrench
30V, 58A, 9m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
Applications
• DC/DC converters
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
V
V
I
E
P
T
R
R
R
DS(ON)
D
GS
J
DSS
AS
D
Symbol
, T
JC
JA
JA
Device Marking
STG
FDD8880
and fast switching speed.
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
G
S
amb
C
C
= 25
= 25
o
C
FDD8880
= 25
Device
(TO-252)
o
o
D-PAK
C, V
C, V
TO-252
o
C, V
®
GS
GS
MOSFET
GS
= 10V) (Note 1)
= 4.5V) (Note 1)
Parameter
T
= 10V, with R
C
D
= 25°C unless otherwise noted
TO-252AA
Package
JA
= 52
Features
• r
• r
• High performance trench technology for extremely low
• Low gate charge
• High power and current handling capability
r
RoHS Compliant
DS(ON)
DS(ON)
DS(ON)
o
2
C/W)
copper pad area
Reel Size
= 9m , V
= 12m , V
13”
GS
GS
= 10V, I
= 4.5V, I
G
Tape Width
12mm
D
-55 to 175
D
S
Ratings
Figure 4
= 35A
D
0.37
2.73
= 35A
100
30
58
51
13
53
55
52
20
April 2008
N
2500 units
Quantity
FDD8880 Rev. B3
tm
Units
W/
o
o
o
C/W
C/W
C/W
mJ
o
W
V
V
A
A
A
A
C
o
C

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FDD8880 Summary of contents

Page 1

... C Parameter = 10V) (Note 1) = 4.5V) (Note 10V, with C/ copper pad area Package Reel Size Tape Width TO-252AA 13” N April 2008 tm = 35A D = 35A Ratings Units Figure 0. -55 to 175 C o 2.73 C/W o 100 C C/W Quantity 12mm 2500 units FDD8880 Rev. B3 ...

Page 2

... 10V 35A 15A 35A, dI /dt = 100A 35A, dI /dt = 100A 27V 10V Min Typ Max 150 250 100 1.2 - 2.5 - 0.007 0.009 - 0.009 0.012 - 0.013 0.015 - 1260 - - 260 - - 150 - - 2 15V DD - 1.3 1.7 = 35A - 3 1.0mA - 2 5 147 - 108 - - 1. 1 Units FDD8880 Rev. B3 ...

Page 3

... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability CURRENT LIMITED BY PACKAGE V = 10V 4. 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDD8880 Rev. B3 175 ...

Page 4

... Resistance vs Junction Temperature = (L)(I )/(1.3*RATED DSS (L/R)ln[(I *R)/(1.3*RATED +1] AS DSS DD o STARTING STARTING T = 150 TIME IN AVALANCHE (ms) AV Capability 10V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0.25 0.5 0. DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( 1.0 = 35A 200 FDD8880 Rev. B3 ...

Page 5

... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature OSS Figure 14. Gate Charge Waveforms for Constant I = 250 120 160 JUNCTION TEMPERATURE ( 15V DD WAVEFORMS IN DESCENDING ORDER 35A GATE CHARGE (nC) g Gate Current 200 25 FDD8880 Rev. B3 ...

Page 6

... Figure 19. Switching Time Test Circuit ©2008 Fairchild Semiconductor Corporation DUT I AS 0.01 0 Figure 16. Unclamped Energy Waveforms gs2 DD - DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g( g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDD8880 Rev 10V 90% ...

Page 7

... C/ never exceeded (EQ 0.01 (0.0645 Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 33.32+ 23.84/(0.268+Area) EQ 33.32+ 154/(1.73+Area) EQ (0.645) (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDD8880 Rev. B3 ...

Page 8

... PSPICE Electrical Model .SUBCKT FDD8880 rev April 2004 9.5e- 9.5e-10 Cin 6 8 1.15e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 33.15 Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 5.3e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 1.7e-9 RLgate RLdrain ...

Page 9

... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 RGATE + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES DRAIN 2 SOURCE 3 FDD8880 Rev. B3 ...

Page 10

... RTHERM1 TH 6 1.44e-1 RTHERM2 6 5 1.9e-1 RTHERM3 5 4 3.0e-1 RTHERM4 4 3 4.0e-1 RTHERM5 3 2 5.7e-1 RTHERM6 2 TL 5.8e-1 SABER Thermal Model SABER thermal model FDD8880T template thermal_model th tl thermal_c th ctherm.ctherm1 th 6 =8e-4 ctherm.ctherm2 6 5 =1e-3 ctherm.ctherm3 5 4 =2.5e-3 ctherm.ctherm4 4 3 =2.6e-3 ctherm ...

Page 11

... Fairchild Semiconductor. The datasheet is for reference information only. The Power Franchise ® tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ ® Definition ® Rev. I34 FDD8880 Rev. B3 ...

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