MOSFET N-CH 250V 8.8A TO-220F

FQPF9N25C

Manufacturer Part NumberFQPF9N25C
DescriptionMOSFET N-CH 250V 8.8A TO-220F
ManufacturerFairchild Semiconductor
SeriesQFET™
FQPF9N25C datasheet
 

Specifications of FQPF9N25C

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs430 mOhm @ 4.4A, 10VDrain To Source Voltage (vdss)250V
Current - Continuous Drain (id) @ 25° C8.8AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs35nC @ 10VInput Capacitance (ciss) @ Vds710pF @ 25V
Power - Max38WMounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.43 Ohms
Forward Transconductance Gfs (max / Min)7 SDrain-source Breakdown Voltage250 V
Gate-source Breakdown Voltage+/- 30 VContinuous Drain Current8.8 A
Power Dissipation38 WMaximum Operating Temperature+ 150 C
Mounting StyleThrough HoleMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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FQP9N25C/FQPF9N25C
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
TO-220
G
D
S
FQP Series
Absolute Maximum Ratings
Symbol
V
Drain-Source Voltage
DSS
I
- Continuous (T
Drain Current
D
- Continuous (T
I
Drain Current
- Pulsed
DM
V
Gate-Source Voltage
GSS
E
Single Pulsed Avalanche Energy
AS
I
Avalanche Current
AR
E
Repetitive Avalanche Energy
AR
dv/dt
Peak Diode Recovery dv/dt
P
Power Dissipation (T
D
- Derate above 25°C
T
, T
Operating and Storage Temperature Range
J
STG
Maximum lead temperature for soldering purposes,
T
L
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
R
Thermal Resistance, Junction-to-Case
θJC
R
Thermal Resistance, Case-to-Sink Typ.
θJS
R
Thermal Resistance, Junction-to-Ambient
θJA
©2004 Fairchild Semiconductor Corporation
Features
• 8.8A, 250V, R
• Low gate charge ( typical 26.5 nC)
• Low Crss ( typical 45.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TO-220F
D
G
S
FQPF Series
T
= 25°C unless otherwise noted
C
Parameter
= 25°C)
C
= 100°C)
C
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
= 25°C)
C
Parameter
QFET
= 0.43Ω @V
= 10 V
DS(on)
GS
D
G
S
FQP9N25C
FQPF9N25C
Units
250
V
8.8
8.8 *
A
5.6
5.6 *
A
35.2
35.2 *
A
± 30
V
285
mJ
8.8
A
7.4
mJ
5.5
V/ns
74
38
W
0.59
0.3
W/°C
-55 to +150
°C
300
°C
FQP9N25C
FQPF9N25C
Units
1.69
3.29
°C/W
0.5
--
°C/W
62.5
62.5
°C/W
Rev. A, March 2004
®

FQPF9N25C Summary of contents

  • Page 1

    ... G ● ● ● ● S FQP9N25C FQPF9N25C Units 250 V 8.8 8 5.6 5 35.2 35 ± 285 mJ 8.8 A 7.4 mJ 5.5 V/ 0.59 0.3 W/°C -55 to +150 °C 300 °C FQP9N25C FQPF9N25C Units 1.69 3.29 °C/W 0.5 -- °C/W 62.5 62.5 °C/W Rev. A, March 2004 ® ...

  • Page 2

    ... G ≤ 8.8A, di/dt ≤ 300A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions = 250 µ 250 µA, Referenced to 25°C ...

  • Page 3

    ... Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 2000 1500 C iss 1000 C oss C rss 500 Notes : ※ MHz Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation 1 10 150 ※ Notes : 1. 250µ s Pulse Test ℃ Figure 2. Transfer Characteristics 20V GS ※ ...

  • Page 4

    ... Notes : ※ Single Pulse - Figure 9-2. Maximum Safe Operating Area 100 125 150 ℃ ※ Notes : 4 - 100 150 Junction Temperature [ Temperature Operation in This Area is Limited by R DS(on) 10 µ s 100 µ 150 Drain-Source Voltage [V] DS for FQPF9N25C Rev. A, March 2004 200 ...

  • Page 5

    ... Typical Characteristics Figure 11-1. Transient Thermal Response Curve for FQP9N25C Figure 11-2. Transient Thermal Response Curve for FQPF9N25C ©2004 Fairchild Semiconductor Corporation (Continued) ※ θ ※ ℃ θ ℃ θ θ Rev. A, March 2004 ...

  • Page 6

    ... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2004 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT DUT DUT ...

  • Page 7

    ... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2004 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

  • Page 8

    ... Package Dimensions 9.90 (8.70) ø3.60 1.27 0.10 2.54TYP [2.54 ] 0.20 10.00 ©2004 Fairchild Semiconductor Corporation TO-220 0.20 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 ] 0.20 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 0.20 –0.05 Dimensions in Millimeters Rev. A, March 2004 ...

  • Page 9

    ... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2004 Fairchild Semiconductor Corporation (Continued) TO-220F ø3.18 0.20 0.10 (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, March 2004 ...

  • Page 10

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...