FQPF9N25C Fairchild Semiconductor, FQPF9N25C Datasheet - Page 2

• Manufacturer Part Number: FQPF9N25C
• Description: MOSFET N-CH 250V 8.8A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF9N25C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 430 mOhm @ 4.4A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 710pF @ 25V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.43 Ohms
• Forward Transconductance Gfs (max / Min): 7 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8.8 A
• Power Dissipation: 38 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.9mH, I
3. I
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
∆BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
≤ 8.8A, di/dt ≤ 300A/µs, V
DSS
∆T
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= 8.8A, V
DD
= 50V, R
DD
Parameter
≤ BV
G
DSS,
= 25 Ω, Starting T
Starting T
J
= 25°C
T
J
C
= 25°C
= 25°C unless otherwise noted
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 µA, Referenced to 25°C
/ dt = 100 A/µs
= 25 Ω
= 250 V, V
= 200 V, T
= V
= 40 V, I
= 25 V, V
= 200 V, I
= 0 V, I
= 30 V, V
= -30 V, V
= 10 V, I
= 125 V, I
= 10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
, I
D
S
S
D
D
D
= 250 µA
= 8.8 A
= 8.8 A,
GS
DS
D
D
= 250 µA
DS
= 4.4 A
GS
C
= 4.4 A
= 8.8 A,
= 8.8 A,
= 125°C
= 0 V
= 0 V,
= 0 V
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Min
250
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.30
0.35
45.5
26.5
13.5
1.58
Typ
545
218
115
7.0
3.5
15
85
90
65
--
--
--
--
--
--
--
--
--
-100
Max
0.43
35.2
100
100
710
150
180
190
140
4.0
8.8
1.5
10
60
40
35
--
--
--
--
--
--
--
Rev. A, March 2004
Units
V/°C
µA
µA
nA
nA
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
V
V
Ω
S
A
A
V