FQPF9N25C Fairchild Semiconductor, FQPF9N25C Datasheet - Page 3

MOSFET N-CH 250V 8.8A TO-220F

FQPF9N25C

Manufacturer Part Number
FQPF9N25C
Description
MOSFET N-CH 250V 8.8A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF9N25C

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
430 mOhm @ 4.4A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
8.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
710pF @ 25V
Power - Max
38W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.43 Ohms
Forward Transconductance Gfs (max / Min)
7 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8.8 A
Power Dissipation
38 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2004 Fairchild Semiconductor Corporation
Typical Characteristics
2000
1500
1000
500
10
10
10
1.25
1.00
0.75
0.50
0.25
0.00
0
10
-1
1
0
10
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs
-1
0
Top :
Bottom : 4.5 V
Figure 1. On-Region Characteristics
1. V
2. f = 1 MHz
Notes :
Drain Current and Gate Voltage
GS
= 0 V
10.0 V
15.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
V
GS
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
10
10
10
I
D
0
0
, Drain Current [A]
V
GS
C
C
C
oss
rss
iss
= 10V
C
C
C
1. 250µ s Pulse Test
2. T
20
iss
oss
rss
Notes :
= C
= C
= C
C
10
10
= 25 ℃
gs
gd
ds
V
1
1
+ C
+ C
GS
Note : T
gd
= 20V
gd
(C
ds
= shorted)
J
= 25 ℃
30
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
25
150
o
Variation with Source Current
C
0.4
5
o
C
4
150 ℃
V
V
Q
GS
SD
and Temperature
G
0.6
10
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
, Total Gate Charge [nC]
-55
V
DS
o
C
V
= 200V
25 ℃
DS
V
= 125V
0.8
15
6
DS
= 50V
1.0
20
1. V
2. 250µ s Pulse Test
Notes :
1. V
2. 250µ s Pulse Test
Notes :
DS
8
= 40V
GS
Note : I
= 0V
1.2
25
D
= 8.8A
Rev. A, March 2004
10
1.4
30

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