HUF75321D3ST Fairchild Semiconductor, HUF75321D3ST Datasheet

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HUF75321D3ST

Manufacturer Part Number
HUF75321D3ST
Description
MOSFET N-CH 55V 20A DPAK
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of HUF75321D3ST

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
36 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
44nC @ 20V
Input Capacitance (ciss) @ Vds
680pF @ 25V
Power - Max
93W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.036 Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
93 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HUF75321D3ST
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2001 Fairchild Semiconductor Corporation
20A, 55V, 0.036 Ohm, N-Channel UltraFET
Power MOSFETs
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
Formerly developmental type TA75321.
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-251AA variant in tape and reel, e.g., HUF75321D3ST.
Packaging
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
HUF75321D3
HUF75321D3S
PART NUMBER
Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html
(FLANGE)
DRAIN
TO-251AA
TO-252AA
JEDEC TO-251AA
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
advanced process technology
PACKAGE
Data Sheet
For severe environments, see our Automotive HUFA series.
75321D
75321D
SOURCE
DRAIN
GATE
BRAND
Features
• 20A, 55V
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
Symbol
- Temperature Compensating PSPICE® and SABER™
- Thermal Impedance SPICE and SABER Models
- TB334, “Guidelines for Soldering Surface Mount
HUF75321D3, HUF75321D3S
Models
Available on the web at: www.fairchildsemi.com
Components to PC Boards”
December 2001
SOURCE
GATE
JEDEC TO-252AA
G
D
S
HUF75321D3, HUF75321D3S Rev. B
DRAIN
(FLANGE)

Related parts for HUF75321D3ST

HUF75321D3ST Summary of contents

Page 1

... PACKAGE HUF75321D3 TO-251AA HUF75321D3S TO-252AA NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-251AA variant in tape and reel, e.g., HUF75321D3ST. Packaging JEDEC TO-251AA DRAIN (FLANGE) Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series. ...

Page 2

... Turn-On Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time GATE CHARGE SPECIFICATIONS Total Gate Charge Gate Charge at 10V Threshold Gate Charge Gate to Source Gate Charge Reverse Transfer Capacitance ©2001 Fairchild Semiconductor Corporation Unless Otherwise Specified C DSS DGR ...

Page 3

... FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 2 DUTY CYCLE - DESCENDING ORDER 0.5 1 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0. FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE ©2001 Fairchild Semiconductor Corporation o C, Unless Otherwise Specified SYMBOL TEST CONDITIONS 25V 0V, ISS 1MHz C OSS (Figure 12) C RSS SYMBOL ...

Page 4

... DS FIGURE 5. FORWARD BIAS SAFE OPERATING AREA PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 0 0 1.5 3 DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 7. SATURATION CHARACTERISTICS ©2001 Fairchild Semiconductor Corporation (Continued PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY T = MAX RATED 100 s 1ms 10ms 100 200 NOTE: Refer to Fairchild Application Notes AN9321 and AN9322. ...

Page 5

... T , JUNCTION TEMPERATURE ( J FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE NOTE: Refer to Fairchild Application Notes AN7254 and AN7260. FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT ©2001 Fairchild Semiconductor Corporation (Continued) 120 160 200 o C) FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs 1000 ...

Page 6

... Test Circuits and Waveforms VARY t TO OBTAIN P R REQUIRED PEAK FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT G(REF) FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 18. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS Q g(TOT) ...

Page 7

... S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.00 VOFF= 0.00) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. ©2001 Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 ...

Page 8

... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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