FQD7P20TM_F080 Fairchild Semiconductor, FQD7P20TM_F080 Datasheet

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FQD7P20TM_F080

Manufacturer Part Number
FQD7P20TM_F080
Description
MOSFET P-CH 200V 5.7A DPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQD7P20TM_F080

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
690 mOhm @ 2.85A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
5.7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
770pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.69 Ohms
Forward Transconductance Gfs (max / Min)
3.7 S
Drain-source Breakdown Voltage
- 200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
- 5.7 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
      
  
  
  
     
     
              










 




 











 



  




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FQD7P20TM_F080 Summary of contents

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Dimensions in Millimeters   ...

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MAX0.96 0.76 0.10 2.30TYP [2.30 0.20]         0.20 0.20 (0.50) 2.30TYP [2.30 0.20] 2.30 0.20 0.50 0.10 0.50 0.10   ...

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