FDD8451 Fairchild Semiconductor, FDD8451 Datasheet

MOSFET N-CH 40V 9A DPAK

FDD8451

Manufacturer Part Number
FDD8451
Description
MOSFET N-CH 40V 9A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet

Specifications of FDD8451

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
990pF @ 20V
Power - Max
30W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.024Ohm
Drain-source On-volt
40V
Gate-source Voltage (max)
±20V
Drain Current (max)
28A
Power Dissipation
30W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.024 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
29 S
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
28 A
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD8451TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD8451
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDD8451
Manufacturer:
FAIRCHILD
Quantity:
3 740
©2009 Fairchild Semiconductor Corporation
FDD8451 Rev. B2
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDD8451
N-Channel PowerTrench
40V, 28A, 24m
Features
V
V
I
E
P
T
R
R
R
D
J
DS
GS
AS
D
Max r
Max r
Low gate charge
Fast Switching
High performance trench technology for extremely low
r
RoHS compliant
Symbol
, T
JC
JA
JA
DS(on)
Device Marking
STG
FDD8451
DS(on)
DS(on)
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous @T
Single Pulse Avalanche Energy
Power Dissipation
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
24m at V
30m at V
GS
GS
-Continuous @T
-Pulsed
= 10V, I
= 4.5V, I
FDD8451
Device
D
D
= 9A
= 7A
Parameter
T
C
A
C
=25°C
= 25°C unless otherwise noted
=25°C
D-PAK(TO-252)
Package
®
MOSFET
1
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, fast
switching speed and extremely low r
Application
DC/DC converter
Backlight inverter
Reel Size
(Note 1a)
(Note 1b)
(Note 1a)
(Note 3)
G
13’’
D
S
Tape Width
-55 to 150
12mm
Ratings
±20
40
28
30
4.1
40
78
20
96
9
DS(on)
www.fairchildsemi.com
.
May 2009
2500 units
Quantity
Units
°C/W
°C/W
°C/W
mJ
°C
W
V
V
A
tm

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FDD8451 Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient JA Package Marking and Ordering Information Device Marking Device FDD8451 FDD8451 ©2009 Fairchild Semiconductor Corporation FDD8451 Rev. B2 ® MOSFET General Description = 9A This N-Channel MOSFET has been designed specifically D to improve the overall efficiency of DC/DC converters using = 7A either synchronous or conventional switching PWM D controllers ...

Page 2

... JA the drain pins guaranteed by design while Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%. 3: Starting T ° 0.1 mH FDD8451 Rev 25°C unless otherwise noted J Test Conditions I = 250 250 A, referenced to D 25°C ...

Page 3

... T , JUNCTION TEMPERATURE ( J Figure 3. Normalized On Resistance vs Junction Temperature 40 PULSE DURATION = 80 s DUTY CYCLE = 0.5%MAX 175 1.5 2.0 2 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDD8451 Rev 25°C unless otherwise noted J 4.0 3 3.0 GS 2.5 2.0 = 3.5V 1 Figure 2. Normalized 160 120 80 40 ...

Page 4

... Unclamped Inductive Switching Capability 100 10 LIMITED BY PACKAGE OPERATION IN THIS 1 AREA MAY BE r LIMITED BY DS(on) SINGLE PULSE MAX RATED 0 DRAIN-SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area FDD8451 Rev 25°C unless otherwise noted J 3000 1000 V = 20V DD = 25V DD 100 0.1 Figure 125 4.1 ...

Page 5

... Typical Characteristics 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 0.005 - Figure 13. Transient Thermal Response Curve FDD8451 Rev 25°C unless otherwise noted RECTANGULAR PULSE DURATION ( NOTES: DUTY FACTOR PEAK www.fairchildsemi.com ...

Page 6

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD8451 Rev. B2 F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ QFET Green FPS™ ...

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