IRL630A Fairchild Semiconductor, IRL630A Datasheet

MOSFET N-CH 200V 9A TO-220

IRL630A

Manufacturer Part Number
IRL630A
Description
MOSFET N-CH 200V 9A TO-220
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of IRL630A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
400 mOhm @ 4.5A, 5V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
27nC @ 5V
Input Capacitance (ciss) @ Vds
755pF @ 25V
Power - Max
69W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRL630A
Manufacturer:
IR
Quantity:
12 500
©1999 Fairchild Semiconductor Corporation
Thermal Resistance
FEATURES
Absolute Maximum Ratings
T
Logic-Level Gate Drive
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10 A (Max.) @ V
Lower R
Symbol
Symbol
J
R
dv/dt
R
R
V
V
E
E
I
I
P
, T
I
T
DM
DSS
AR
D
GS
AS
AR
CS
JC
JA
D
L
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8
: 0.335
(Typ.)
Junction-to-Ambient
Junction-to-Case
Characteristic
Characteristic
Case-to-Sink
from case for 5-seconds
C
=25 C)
C
C
DS
=25 C)
=100 C)
= 200V
(1)
(2)
(1)
(1)
(3)
Typ.
0.5
--
--
- 55 to +150
Value
300
0.55
200
BV
R
I
5.7
6.9
1
32
54
69
TO-220
2
1.Gate 2. Drain 3. Source
D
3
9
20
9
5
DS(on)
= 9 A
DSS
IRL630A
Max.
1.81
62.5
--
= 0.4
= 200 V
Units
Units
W/ C
V/ns
C/W
mJ
mJ
W
V
A
A
V
A
C
Rev. B
1

Related parts for IRL630A

IRL630A Summary of contents

Page 1

... Purposes, 1/8 Thermal Resistance Symbol Characteristic R Junction-to-Case JC R Case-to-Sink CS R Junction-to-Ambient JA ©1999 Fairchild Semiconductor Corporation = 200V DS = =100 C) C (1) (2) (1) (1) (3) = from case for 5-seconds Typ. -- 0.5 -- IRL630A BV = 200 V DSS R = 0.4 DS(on TO-220 1.Gate 2. Drain 3. Source Value Units V 200 6.9 V/ns ...

Page 2

... IRL630A Electrical Characteristics Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

Page 3

... Fig 3. On-Resistance vs. Drain Current Drain Current [A] D Fig 5. Capacitance vs. Drain-Source Voltage iss oss iss rss oss C rss Drain-Source Voltage [V] DS Fig 2. Transfer Characteristics Fig 4. Source-Drain Diode Forward Voltage Source-Drain Voltage [V] SD Fig 6. Gate Charge vs. Gate-Source Voltage IRL630A @ Gate-Source Voltage [ Total Gate Charge [nC] 3 ...

Page 4

... IRL630A Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ J Fig 9. Max. Safe Operating Area DS(on Drain-Source Voltage [ D=0.5 0.2 0.1 0. 0.02 0.01 single pulse - Square Wave Pulse Duration 1 Fig 8. On-Resistance vs. Temperature Fig 10. Max. Drain Current vs. Case Temperature Fig 11. Thermal Response @ Notes : 1. Z (t)=1. ...

Page 5

... Fig 13. Resistive Switching Test Circuit & Waveforms V out DUT 5V Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms Vary t to obtain required peak DUT Same Type as DUT DUT R 2 Current Sampling ( Resistor out 90 0.5 rated 10 d(on DSS IRL630A Charge d(off off BV DSS 1 ---- 2 -------------------- DSS (t) DS Time ...

Page 6

... IRL630A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I Driver Driver ) DUT ) DUT ) + Same Type as DUT dv/dt controlled controlled by Duty Factor D S Gate Pulse Width -------------------------- D = Gate Pulse Period , Body Diode Forward Current di/ Body Diode Reverse Current Body Diode Recovery dv/dt ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

Related keywords