FQPF20N06 Fairchild Semiconductor, FQPF20N06 Datasheet

MOSFET N-CH 60V 15A TO-220F

FQPF20N06

Manufacturer Part Number
FQPF20N06
Description
MOSFET N-CH 60V 15A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF20N06

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
590pF @ 25V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
15 A
Power Dissipation
30000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Fall Time
25 ns
Rise Time
45 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2001 Fairchild Semiconductor Corporation
FQPF20N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
S
C
Parameter
Parameter
= 25°C)
T
C
FQPF Series
C
C
TO-220F
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 15A, 60V, R
• Low gate charge ( typical 11.5 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
G
!
!
DS(on)
Typ
--
--
! "
! "
FQPF20N06
= 0.06
-55 to +175
!
!
!
!
S
D
"
"
"
"
"
"
10.7
155
300
3.0
7.0
0.2
60
15
60
15
30
25
@V
GS
Max
5.00
62.5
QFET
= 10 V
May 2001
Units
W/°C
Units
°C/W
°C/W
V/ns
Rev. A1. May 2001
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

Related parts for FQPF20N06

FQPF20N06 Summary of contents

Page 1

... C Parameter May 2001 QFET = 0. DS(on " " ! " ! " " " " " FQPF20N06 Units 155 mJ 15 3.0 mJ 7.0 V/ns 30 0.2 W/°C -55 to +175 300 Typ Max Units -- 5.00 °C/W -- 62.5 °C/W Rev. A1. May 2001 TM ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 800 15A 25V ≤ 20A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2001 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° ...

Page 3

... I , Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1200 C 800 oss C iss 400 C rss Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation 175 ℃ 25 ℃ Figure 2. Transfer Characteristics 175 ℃ ※ Note : T = 25℃ 0.2 0.4 Figure 4 ...

Page 4

... Notes : 175 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2001 Fairchild Semiconductor Corporation (Continued) 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 100 Figure 10. Maximum Drain Current ※ ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2001 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2001 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2001 Fairchild Semiconductor Corporation TO-220F ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Rev. A1. May 2001 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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