FQPF2N70 Fairchild Semiconductor, FQPF2N70 Datasheet

MOSFET N-CH 700V 2A TO-220F

FQPF2N70

Manufacturer Part Number
FQPF2N70
Description
MOSFET N-CH 700V 2A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQPF2N70

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.3 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
700V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
11nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
28W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6.3 Ohms
Forward Transconductance Gfs (max / Min)
2.45 S
Drain-source Breakdown Voltage
700 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2 A
Power Dissipation
28 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQPF2N70
Manufacturer:
FSC
Quantity:
35 000
Part Number:
FQPF2N70
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQPF2N70
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2003 Fairchild Semiconductor Corporation
FQPF2N70
700V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
STG
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
D
S
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
TO-220F
FQPF Series
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 2.0A, 700V, R
• Low gate charge ( typical 9.0 nC)
• Low Crss ( typical 5.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
G
!
!
DS(on)
Typ
--
--
! "
! "
FQPF2N70
-55 to +150
= 6.3
!
!
!
!
S
D
"
"
"
"
"
"
0.22
140
300
700
2.0
1.3
8.0
2.0
2.8
4.5
28
30
@V
Max
4.46
62.5
GS
QFET
= 10 V
Units
W/°C
Units
Rev. A, March 2003
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQPF2N70 Summary of contents

Page 1

... C Parameter QFET = 6 DS(on " " ! " ! " " " " " FQPF2N70 Units 700 2.0 1.3 8.0 30 140 mJ 2.0 2.8 mJ 4.5 V/ns 28 0.22 W/°C -55 to +150 300 Typ Max Units -- 4.46 °C/W -- 62.5 °C/W Rev. A, March 2003 ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 45mH 2.0A 50V ≤ 2.0A, di/dt ≤ 200A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2003 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 700 ...

Page 3

... Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 500 400 C iss 300 C oss 200 C rss 100 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation 0 10 ※ Note : 1. 250μ s Pulse Test 25℃ 10V 0 10 ※ Note : T = 25℃ ...

Page 4

... Notes : 150 Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2003 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Note : 0 250 μ 0.0 -100 100 150 200 o C] Figure 8. On-Resistance Variation 2.0 1.5 100 1.0 0.5 0 Figure 10. Maximum Drain Current ※ ...

Page 5

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2003 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2003 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2003 Fairchild Semiconductor Corporation TO-220F ø3.18 0.20 0.10 (1.00x45 ) 0.50 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, March 2003 ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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