NDT452AP Fairchild Semiconductor, NDT452AP Datasheet

NDT452AP

Manufacturer Part Number

NDT452AP

Description

MOSFET P-CH 30V 5A SOT-223-4

Manufacturer

Fairchild Semiconductor

Type

Power MOSFETr

Datasheet

1.NDT452AP.pdf (7 pages)

Specifications of NDT452AP

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

65 mOhm @ 5A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

2.8V @ 250µA

Gate Charge (qg) @ Vgs

30nC @ 10V

Input Capacitance (ciss) @ Vds

690pF @ 15V

Power - Max

1.1W

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.065Ohm

Drain-source On-volt

30V

Gate-source Voltage (max)

±20V

Drain Current (max)

Power Dissipation

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-65C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

3 +Tab

Package Type

SOT-223

Configuration

Single Dual Drain

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.065 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

7 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

5 A

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 65 C

Continuous Drain Current Id

Drain Source Voltage Vds

30V

On Resistance Rds(on)

65mohm

Rds(on) Test Voltage Vgs

-10V

Threshold Voltage Vgs Typ

1.6V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NDT452APTR

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* Order option J23Z for cropped center drain lead.

Symbol

THERMAL CHARACTERISTICS

Absolute Maximum Ratings

________________________________________________________________________________

DSS

GSS

NDT452AP

P-Channel Enhancement Mode Field Effect Transistor

General Description

Power SOT P-Channel enhancement mode power field

effect transistors are produced using Fairchild's proprietary,

high cell density, DMOS technology. This very high density

process is especially tailored to minimize on-state resistance

and provide superior switching performance. These devices

are particularly suited for low voltage applications such as

notebook computer power management and DC motor

control.

STG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current - Continuous

Maximum Power Dissipation

Operating and Storage Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

- Pulsed

= 25°C unless otherwise noted

(Note 1a)

(Note 1b)

(Note 1c)

(Note 1a)

(Note 1)

Features

-5A, -30V. R

High density cell design for extremely low R

High power and current handling capability in a widely used

surface mount package.

DS(ON)

NDT452AP

-65 to 150

= 0.1

= 0.065

- 15

±20

-30

1.3

1.1

-5

@ V

= -4.5V.

= -10V

DS(ON)

June 1996

NDT452AP Rev. B1

Units

°C/W

°C

Related parts for NDT452AP

NDT452AP Summary of contents

Page 1

... High power and current handling capability in a widely used surface mount package 25°C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) June 1996 = 0.065 @ V = -10V DS(ON 0 -4.5V. DS(ON DS(ON NDT452AP -30 ± 1.3 1.1 -65 to 150 42 12 NDT452AP Rev Units °C °C/W °C/W ...

Page 2

... I = -250 µ 125° - -5 125° - 1.0 MHz GEN GEN Min Typ Max Units - µA -10 µA 100 nA -100 nA -1 -1.6 -2.8 V -0.7 -1.2 -2.2 0.052 0.065 0.075 0.13 0.085 0.1 - 690 pF 430 pF 160 3.2 nC 5.2 nC NDT452AP Rev. B1 ...

Page 3

... C/W when mounted on a 0.0123 in pad of 2oz copper. 1a Scale letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Conditions -2.5 A (Note -2 /dt = 100 A/µ Min Typ Max Units -2.5 A -0.85 -1.2 V 100 ns is guaranteed NDT452AP Rev. B1 ...

Page 4

... Figure 6. Gate Threshold Variation with V = -3. 4.0 -4.5 -5.0 -6 -12 - DRAIN CURRENT (A) D Voltage and Drain Current. = -10V T = 125°C J 25°C -55° -12 - DRAIN CURRENT ( -250µ 100 T , JUNCTION TEMPERATURE (°C) J Temperature. -10 -20 -20 GS 125 150 NDT452AP Rev. B1 ...

Page 5

... Figure 8. Body Diode Forward Voltage Variation with Current and Temperature -5. iss 6 C oss rss Figure 10. Gate Charge Characteristics. t d(on OUT Figure 12. Switching Waveforms 25°C -55°C 0.4 0.8 1.2 1 BODY DIODE FORWARD VOLTAGE ( -5V DS -10V -20V GATE CHARGE (nC off t t d(off PULSE WIDTH NDT452AP Rev INVERTED ...

Page 6

... G S 0.01 0.8 1 0.1 0 Figure 16. Maximum Safe Operating Area. 0.01 0 TIME (sec) 1 4.5"x5" FR-4 Board Still Air 0.2 0.4 0.6 0.8 2 2oz COPPER MOUNTING PAD AREA ( -10V GS = See Note 25° DRAIN-SOURCE CURRENT ( ( See Note P(pk Duty Cycle ( NDT452AP Rev. B1 ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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