FDD120AN15A0 Fairchild Semiconductor, FDD120AN15A0 Datasheet

MOSFET N-CH 150V 14A D-PAK

FDD120AN15A0

Manufacturer Part Number
FDD120AN15A0
Description
MOSFET N-CH 150V 14A D-PAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD120AN15A0

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
120 mOhm @ 4A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14.5nC @ 10V
Input Capacitance (ciss) @ Vds
770pF @ 25V
Power - Max
65W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.12 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14 A
Power Dissipation
65 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDD120AN15A0
Manufacturer:
FAIRCHILD
Quantity:
11 797
Part Number:
FDD120AN15A0
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2002 Fairchild Semiconductor Corporation
N-Channel PowerTrench
150V, 14A, 120m
Features
• r
• Q
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 82845
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
(FLANGE)
V
V
I
E
P
T
R
R
R
R
MOSFET Maximum Ratings
FDP120AN15A0 / FDD120AN15A0
D
DRAIN
GS
J
DSS
AS
D
Symbol
, T
JC
JA
JA
JA
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
DS(ON)
g
(tot) = 11.2nC (Typ.), V
STG
= 101m (Typ.), V
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-252, TO-220
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-220 (Note 2)
Thermal Resistance Junction to Ambient TO-252, 1in
FDP SERIES
TO-220AB
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
GS
GS
amb
C
C
= 25
= 100
o
= 10V
= 10V, I
C
= 25
o
C, V
o
o
C, V
C, V
D
®
GATE
GS
= 4A
GS
DRAIN
MOSFET
GS
SOURCE
= 10V)
Parameter
= 10V)
= 10V) with R
T
C
= 25°C unless otherwise noted
certification.
SOURCE
GATE
JA
= 52
Applications
• DC/DC Converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
FDD SERIES
TO-252AA
o
2
C/W
copper pad area
(FLANGE)
DRAIN
-55 to 175
Ratings
Figure 4
0.43
2.31
FDP120AN15A0 / FDD120AN15A0 Rev. B
150
122
100
9.7
2.8
14
65
62
52
G
20
September 2002
D
S
Units
W/
o
o
o
o
C/W
C/W
C/W
C/W
mJ
o
W
V
V
A
A
A
A
C
o
C

Related parts for FDD120AN15A0

FDD120AN15A0 Summary of contents

Page 1

... GATE TO-252AA FDD SERIES T = 25°C unless otherwise noted C Parameter 10V 10V 10V) with C copper pad area certification. September 2002 DRAIN D (FLANGE Ratings Units 150 9.7 A 2.8 A Figure 4 A 122 0. -55 to 175 C o 2.31 C/W o 100 C C C/W FDP120AN15A0 / FDD120AN15A0 Rev ...

Page 2

... 10V 4A, dI /dt = 100A 4A, dI /dt = 100A Tape Width Quantity 16mm 2500 units N/A 50 units Min Typ Max 150 - - - - 150 250 100 0.101 0.120 - 0.113 0.170 - 0.235 0.282 - 770 - - 11.2 14.5 - 1.4 1.8 = 75V 3 1.0mA - 109 FDP120AN15A0 / FDD120AN15A0 Rev. B Units ...

Page 3

... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDP120AN15A0 / FDD120AN15A0 Rev. B 175 ...

Page 4

... DUTY CYCLE = 0.5% MAX 2.0 1.5 1.0 0.5 - Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature )/(1.3*RATED DSS DD 0 *R)/(1.3*RATED +1] AS DSS DD STARTING STARTING T = 150 TIME IN AVALANCHE (ms) AV Capability V = 10V DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( C) J FDP120AN15A0 / FDD120AN15A0 Rev 200 ...

Page 5

... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS 150 Figure 14. Gate Charge Waveforms for Constant = 250 A - 120 160 JUNCTION TEMPERATURE ( 75V DD WAVEFORMS IN DESCENDING ORDER 14A GATE CHARGE (nC) g Gate Currents FDP120AN15A0 / FDD120AN15A0 Rev. B 200 12 ...

Page 6

... Figure 19. Switching Time Test Circuit ©2002 Fairchild Semiconductor Corporation DUT 0.01 Figure 16. Unclamped Energy Waveforms gs2 DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDP120AN15A0 / FDD120AN15A0 Rev 10V 90% ...

Page 7

... C/ never exceeded (EQ 0.01 (0.0645 Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 33.32+ 23.84/(0.268+Area) EQ 33.32+ 154/(1.73+Area) EQ (0.645) (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDP120AN15A0 / FDD120AN15A0 Rev. B ...

Page 8

... PSPICE Electrical Model .SUBCKT FDD120AN15A0 2.5e- 2.5e-10 Cin 6 8 7.5e-10 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 162 Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 3e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 2e-9 RLgate RLdrain RLsource Mmed MmedMOD ...

Page 9

... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 RGATE + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDP120AN15A0 / FDD120AN15A0 Rev. B DRAIN 2 SOURCE 3 ...

Page 10

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDP120AN15A0 / FDD120AN15A0 Rev. B ...

Page 11

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet Series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...

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