IRFR9210TRLPBF Vishay, IRFR9210TRLPBF Datasheet
IRFR9210TRLPBF
Specifications of IRFR9210TRLPBF
Related parts for IRFR9210TRLPBF
IRFR9210TRLPBF Summary of contents
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... Fast Switching S • Compliant to RoHS Directive 2002/95/EC DESCRIPTION The Power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. ...
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... IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91281 S10-1139-Rev. B, 17-May-10 IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 = 25 ° 150 °C Fig Normalized On-Resistance vs. Temperature C Vishay Siliconix Fig Typical Transfer Characteristics www.vishay.com 3 ...
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... IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91281 S10-1139-Rev. B, 17-May-10 ...
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... Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91281 S10-1139-Rev. B, 17-May-10 IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) d(off) ...
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... IRFR9210, IRFU9210, SiHFR9210, SiHFU9210 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current I AS ...
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... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91281. Document Number: 91281 S10-1139-Rev ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...