MOSFET N-CH 30V 94A D-PAK

 

FDD8896

Manufacturer Part NumberFDD8896
DescriptionMOSFET N-CH 30V 94A D-PAK
ManufacturerFairchild Semiconductor
SeriesPowerTrench®
FDD8896 datasheets

Availability: In stock

Quantity: 20000

International delivery:

Warranty: 60 days

Shipping & payment terms

Added to cart

Select quantity

 

FDD8896 cross reference pin-to-pin replacement

Part numberManufacturerVdsIdPackageConfigurationDatasheet
  AP86T02GH-HF Advanced Power Electronics Corp. 25V 75A TO-252 Single N AP86T02GH-HF.pdf
AP9412GH  AP9412GH Advanced Power Electronics Corp. 30V 73A TO-252 Single N AP9412GH.pdf
AP0603GH-HF  AP0603GH-HF Advanced Power Electronics Corp. 30V 72A TO-252 Single N AP0603GH-HF.pdf
AP86T02GH  AP86T02GH Advanced Power Electronics Corp. 25V 75A TO-252 Single N AP86T02GH.pdf
AP83T03GJ-HF  AP83T03GJ-HF Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP83T03GH-HF.pdf
AP83T02GH-HF  AP83T02GH-HF Advanced Power Electronics Corp. 25V 75A TO-252 Single N AP83T02GH-HF.pdf
AP70L02GH  AP70L02GH Advanced Power Electronics Corp. 25V 66A TO-252 Single N AP70L02GH.pdf
AP9430GH-HF  AP9430GH-HF Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP9430GH-HF.pdf
AP90T03GH  AP90T03GH Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP90T03GH.pdf
AP2R803GH  AP2R803GH Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP2R803GH.pdf
AP9412AGH  AP9412AGH Advanced Power Electronics Corp. 30V 68A TO-252 Single N AP9412AGH.pdf
AP83T03GH-HF  AP83T03GH-HF Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP83T03GH-HF.pdf
AP85T03GH  AP85T03GH Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP85T03GH.pdf
AP86T03GH  AP86T03GH Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP86T03GH.pdf
AP92U03GH-HF  AP92U03GH-HF Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP92U03GH-HF.pdf
AP9410GH-HF  AP9410GH-HF Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP9410GH-HF.pdf
AP9410AGH-HF  AP9410AGH-HF Advanced Power Electronics Corp. 30V 67A TO-252 Single N AP9410AGH-HF.pdf
AP85U03GH-HF  AP85U03GH-HF Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP85U03GH-HF.pdf
AP92T03GH  AP92T03GH Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP92T03GH.pdf
AP0403GH-HF  AP0403GH-HF Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP0403GH-HF.pdf
AP0403GH  AP0403GH Advanced Power Electronics Corp. 30V 75A TO-252 Single N AP0403GH.pdf
More replacements from APEC

Specifications of FDD8896

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs5.7 mOhm @ 35A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C94AVgs(th) (max) @ Id2.5V @ 250µA
Gate Charge (qg) @ Vgs60nC @ 10VInput Capacitance (ciss) @ Vds2525pF @ 15V
Power - Max80WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.0057 Ohm @ 10 V
Drain-source Breakdown Voltage30 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current17 APower Dissipation80000 mW
Maximum Operating Temperature+ 175 CMounting StyleSMD/SMT
Minimum Operating Temperature- 55 CCaseTO-252
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
Page 1/11

Download datasheet (568Kb)Embed
Next
FDD8896 / FDU8896
N-Channel PowerTrench
30V, 94A, 5.7m
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
and fast switching speed.
DS(ON)
Applications
• DC/DC converters
D
G
S
D-PAK
TO-252
(TO-252)
MOSFET Maximum Ratings
Symbol
V
Drain to Source Voltage
DSS
V
Gate to Source Voltage
GS
Drain Current
o
Continuous (T
= 25
C
o
I
Continuous (T
= 25
D
C
Continuous (T
= 25
amb
Pulsed
E
Single Pulse Avalanche Energy (Note 2)
AS
Power dissipation
P
D
o
Derate above 25
C
T
, T
Operating and Storage Temperature
J
STG
Thermal Characteristics
R
Thermal Resistance Junction to Case TO-252, TO-251
JC
R
Thermal Resistance Junction to Ambient TO-252, TO-251
JA
R
Thermal Resistance Junction to Ambient TO-252, 1in
JA
©2008 Fairchild Semiconductor Corporation
®
MOSFET
Features
• r
= 5.7m , V
DS(ON)
• r
= 6.8m , V
DS(ON)
• High performance trench technology for extremely low
r
DS(ON)
• Low gate charge
• High power and current handling capability
I-PAK
(TO-251AA)
G D S
T
= 25°C unless otherwise noted
C
Parameter
C, V
= 10V) (Note 1)
GS
C, V
= 4.5V) (Note 1)
GS
o
o
C, V
= 10V, with R
= 52
C/W)
GS
JA
2
copper pad area
April 2008
tm
= 10V, I
= 35A
GS
D
= 4.5V, I
= 35A
GS
D
D
G
S
Ratings
Units
30
V
20
V
94
A
85
A
17
A
Figure 4
A
168
mJ
80
W
o
0.53
W/
C
o
-55 to 175
C
o
1.88
C/W
o
100
C/W
o
52
C/W
FDD8896 / FDU8896 Rev. C2

Related parts for FDD8896

Part Number DescriptionManufacturer Datasheet
FDD8878  FDD8878 MOSFET N-CH 30V 40A D-PAK Fairchild Semiconductor
FDD8882  FDD8882 MOSFET N-CH 30V 55A D-PAK Fairchild Semiconductor
FDD8876  FDD8876 MOSFET N-CH 30V 73A D-PAK Fairchild Semiconductor
FDD8880  FDD8880 MOSFET N-CH 30V 58A D-PAK Fairchild Semiconductor
FDD8874  FDD8874 MOSFET N-CH 30V 116A D-PAK Fairchild Semiconductor
FDD8870  FDD8870 MOSFET N-CH 30V 160A D-PAK Fairchild Semiconductor
FDD8896_F085  FDD8896_F085 MOSFET N-CH 30V 94A DPAK Fairchild Semiconductor
FDD8896_NBSW006  FDD8896_NBSW006 MOSFET N-CH 30V 35A DPAK Fairchild Semiconductor
  FDD8870_08 FAIRCHILD [Fairchild Semiconductor]
  FDD8874_08 N-Channel PowerTrench MOSFET 30V, 116A, 5.1m ohm FAIRCHILD [Fairchild Semiconductor]
  FDD8880_08 FAIRCHILD [Fairchild Semiconductor]
  FDD8896_12 FAIRCHILD [Fairchild Semiconductor]
FDD8876_NL  FDD8876_NL MOSFET Power Trans MOS N-Ch 30V 15A 3-Pin 2+Tab Fairchild Semiconductor
  FDD86113LZ Fairchild Semiconductor
  FDD8424H_F085A Fairchild Semiconductor

FDD8896 Summary of contents

  • Page 1

    ... High power and current handling capability I-PAK (TO-251AA 25°C unless otherwise noted C Parameter 10V) (Note 4.5V) (Note 10V, with C/ copper pad area April 2008 tm = 10V 35A 4.5V 35A Ratings Units Figure 4 A 168 0. -55 to 175 C o 1.88 C/W o 100 C C/W FDD8896 / FDU8896 Rev. C2 ...

  • Page 2

    ... DD GS Tape Width Quantity 13” 12mm 2500 units N/A 75 units Min Typ Max 150 250 100 1.2 - 2.5 - 0.0047 0.0057 - 0.0057 0.0068 - 0.0075 0.0092 - 2525 - - 490 - - 300 - - 2 15V DD - 2.3 3.0 = 35A - 6 1.0mA - 4 9 171 - 106 - - 143 - - 1. 1 FDD8896 / FDU8896 Rev. C2 Units ...

  • Page 3

    ... Figure 2. Maximum Continuous Drain Current RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) Figure 4. Peak Current Capability CURRENT LIMITED BY PACKAGE 50 75 100 125 150 CASE TEMPERATURE ( C) C Case Temperature NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDD8896 / FDU8896 Rev. C2 175 ...

  • Page 4

    ... Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature = (L)(I )/(1.3*RATED DSS (L/R)ln[(I *R)/(1.3*RATED +1] AS DSS DD STARTING STARTING T = 150 TIME IN AVALANCHE (ms) AV Capability 10V 0.2 0.4 0 DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( C) J FDD8896 / FDU8896 Rev 100 = 2.5V 0.8 = 35A D 200 ...

  • Page 5

    ... C) Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature ISS OSS Figure 14. Gate Charge Waveforms for Constant I = 250 120 160 JUNCTION TEMPERATURE ( 15V DD WAVEFORMS IN DESCENDING ORDER 35A GATE CHARGE (nC) g Gate Current FDD8896 / FDU8896 Rev. C2 200 50 ...

  • Page 6

    ... Figure 19. Switching Time Test Circuit ©2008 Fairchild Semiconductor Corporation DUT I AS 0.01 0 Figure 16. Unclamped Energy Waveforms gs2 DD - DUT g(REF) 0 Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g( g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDD8896 / FDU8896 Rev 10V 90% ...

  • Page 7

    ... C/ never exceeded (EQ 0.01 (0.0645 Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 33.32+ 23.84/(0.268+Area) EQ 33.32+ 154/(1.73+Area) EQ (0.645) (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDD8896 / FDU8896 Rev. C2 ...

  • Page 8

    ... PSPICE Electrical Model .SUBCKT FDD8896 rev July 2003 2.3e 2.3e-9 Cin 6 8 2.3e-9 Dbody 7 5 DbodyMOD Dbreak 5 11 DbreakMOD Dplcap 10 5 DplcapMOD Ebreak 32.6 Eds Egs Esg Evthres Evtemp GATE Lgate 1 9 4.6e-9 Ldrain 2 5 1.0e-9 Lsource 3 7 1.7e-9 RLgate RLdrain ...

  • Page 9

    ... DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + + 19 LGATE EVTEMP 8 RGATE + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDD8896 / FDU8896 Rev. C2 DRAIN 2 SOURCE 3 ...

  • Page 10

    ... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDD8896 / FDU8896 Rev. C2 ...

  • Page 11

    ... Fairchild Semiconductor. The datasheet is for reference information only. The Power Franchise ® tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ ® Definition FDD8896 / FDU8896 Rev. C2 ® Rev. I34 ...

Related keywords:

  • fdd8896
  • fdd8882
  • fdd8880
  • fdd8878
  • fdd8874
  • fdd8870
  • FDD8896 datasheet
  • FDD8896 data sheet
  • FDD8896 pdf datasheet
  • FDD8896 component
  • FDD8896 part
  • FDD8896 distributor
  • FDD8896 RoHS
  • FDD8896 datasheet download